Tunneling Field Effect Transistor Technology

Softcover Nachdruck of the original 1. Auflage 2016
ISBN: 978-3-319-81087-4
Verlag: Springer International Publishing

Buch, Englisch, 213 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 347 g

This book provides a single-source reference to the state-of-the art in
tunneling field effect transistors (TFETs). Readers will learn the TFETs
physics from advanced atomistic simulations, the TFETs fabrication process and
the important roles that TFETs will play in enabling integrated circuit designs
for power efficiency.

Zielgruppe

Research

Autoren/Hrsg.

Chan, Mansun

Zhang, Lining

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf

Inhaltsverzeichnis

Steep Slope Devices and TFETs.- Tunnel-FET Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.