Capper / Scheel / Rudolph Crystal Growth Technology

Semiconductors and Dielectrics
1. Auflage 2011
ISBN: 978-3-527-63288-6
Verlag: Wiley-VCH
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 342 Seiten, E-Book

Ein international zusammengesetztes Expertenteam stellt Ihnen die neuesten Aufwachsverfahren für Einkristalle vor und erklärt moderne Anwendungen in der Produktion von Halbleiterwerkstoffen und Dielektrika.

Autoren/Hrsg.

Capper, Peter

Scheel, Hans J.

Rudolph, Peter

Weitere Mitwirkende

Scheel, Hans J.

Inhaltsverzeichnis

Preface

 

PART I: Basic Concepts in Crystal Growth Technology

 

THERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSES

Introduction

General Approach of Thermodynamic Modeling

Crystal Growth in the System Si-C-O-Ar (Example 1)

Crystal Growth of Carbon-Doped GaAs (Example 2)

Summary and Conclusions

MODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALS

Introduction

Model Description

Results and Discussions

Conclusions

ADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCE

Introduction

Axial Vibrational Control in Crystal Growth

AVC-Assisted Czochralski Method

AVC-Assisted Bridgman Method

AVC-Assisted Floating Zone Method

Conclusions

 

PART II: Semiconductors

 

NUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICS

Introduction

Directional Solidification Method

Crystallization Process

Impurity Incorporation in Crystals

Summary

CHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANT

Introduction

Retrospection

Crystal Growth Without B2O3 Encapsulant

Inclusions, Precipitates and Dislocations

Residual Impurities and Special Defect Studies

Electrical and Optical Properties in SI GaAs

Boron in SC GaAs

Outlook on TMF-VCz

Conclusions

THE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGY

Introduction

Selected Fundamentsals

TMF Generation in Heater-Magnet Modules

The HMM Design

Numerical Measurements

Growth Results under TMF

Conclusions and Outlook

MANUFACTURING OF BULK AlN SUBSTRATES

Introduction

Modeling

Experiment

Results and Discussion

Conclusions

INTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaN

Introduction

Classification, Nomenclature and Characterization of Dislocations in SiC and GaN

Conversion of Basal Plane Dislocations During SiC Epitaxy

Reduction of Dislocations During Homoepitaxy of GaN

Conclusions

LOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTS

Introduction

Crystal Growth from Quaternary Melts

Synthesis and Bulk Crystal Growth

Conclusion

MERCURY CADMIUM TELLURIDE (MCT) GROWTH TECHNOLOGY USING ACRT AND LPE

Introduction

Bridgman/ACRT Growth of MCT

Liquid Phase Epitaxy of MCT

THE USE OF A PLATINUM TUBE AS AN AMPOULE SUPPORT IN THE BRIDGMAN GROWTH OF BULK CZT CRYSTALS

Introduction

The Importance of the Solid/Liquid Interface

Approaches for Crystal Growth Using Ampoule Support

Results and Discussions

Conclusions

 

PART III: Dielectrics

 

MODELING AND OPTIMIZATION OF OXIDE CRYSTAL GROWTH

Introduction

Radiative Heat Transfer (RHT)

Numerical Model

Results and Discussion

Conclusions

ADVANCED MATERIAL DEVELOPMENT FOR INERTIAL FUSION ENERGY (IFE)

Introduction

Production of Nd:Phosphate Laser Glass and KDP Frequency-Conversion Crystals

Yb:S-FAP Crystals

YCOB Crystals

Advanced Material Concepts for Power-Plant Designs

Summary

MAGNETO-OPTIC GARNET SENSOR FILMS: PREPARATION, CHARACTERIZATION, APPLICATION

Introduction

Bi-Substituted Garnets

LPE Deposition and Topological Film Properties

Applications

Conclusions

GROWTH TECHNOLOGY AND LASER PROPERTIES OF Yb-DOPED SESQUIOXIDES

Introduction

Structure and Physical Properties

Crystal Growth

Spectroscopic Characterization

Laser Experiments

Summary and Outlook

CONTINUOUS GROWTH OF ALKALI-HALIDES: PHYSICS AND TECHNOLOGY

Modern Requirements to Large Alkali-Halide Crystals

Conditions of Steady-State Crystallization in Conventional Melt-Growth Methods and in Their Modifications

Macrodefect Formation in AHC

Dynamics of Thermal Conditions during Continuous Growth

Advanced Growth-Control Algorithms

Summary

TRENDS IN SCINTILLATION CRYSTALS

Introduction

Novel Scintillation Materials

Scintillation Detectors for Image Visualization and Growth Techniques for Scintillation Crystals

High Spatial Resolution Scintillation Detectors

Conclusions

 

PART IV: Crystal Machining

 

CRYSTAL MACHINING USING ATMOSPHERIC PRESSURE PLASMA

Introduction

Plasma Chemical Vaporization Machining (PCVM)

Numerically Controlled Sacrific

Über Autor(innen)

Peter Capper is a Materials Team Leader at SELEX GALILEO Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material mercury cadmium telluride (MCT). He holds the patent for the application of the accelerated crucible rotation technique to Bridgman growth and is recognised as a world authority on MCT. He has authored/co-authored over 100 Journal articles and edited/co-edited/co-written 10 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium (France) and a SPIE Symposium (USA) and has edited/co-edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics and is a Series Editor on the Wiley Series `Materials for Electronic and Optoelectronic Appliations¿. In 2008 he received an award from the Swiss Crystallographic Society for his bulk growth work.

 

Peter Rudolph is currently the coordinator of the technology department of the Leibniz-Institute for Crystal Growth in Berlin. His present research field is the growth of semiconductor crystals (GaAs, Ge, Si) in magnetic fields. He obtained the PhD in Solid State Physics at the Technical University of Lvov in 1972, and in 1985 the Professor position at the Humboldt University in Berlin. From 1993-94 he was Guest Professor at the Tohoku University in Sendai. He is associate editor of J. Crystal Growth, president of the German Society of Crystal Growth and member of the IOCG executive committee. He is the author of one monograph, more than 200 papers and book chapters, 7 books editions and 33 patent descriptions. He acted as co-chair and advisor of several international conferences and schools. He received innovation prizes in 2001 and 2008.