Brozek Micro- and Nanoelectronics

Emerging Device Challenges and Solutions
1. Auflage 2014
ISBN: 978-1-4822-1491-8
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 383 Seiten

Reihe: Devices, Circuits, and Systems

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text:

- Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling

- Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties

- Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches

- Describes the latest developments in carbon nanotubes, iii-v devices structures, and more

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

Zielgruppe

Semiconductor electronics industry managers, engineers, and designers, as well as graduate students studying electrical engineering, computer science, nanoelectronics, and solid state physics.

Autoren/Hrsg.

Brozek, Tomasz

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Preface

Editor

Contributors

Silicon Compound Devices

SiGe BiCMOS Technology and Devices; Edward Preisler and Marco Racanelli

Si–Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices; Guangrui (Maggie) Xia and Yuanwei Dong

SiC MOS Devices: N Passivation of Near-Interface Defects; P. M. Mooney and A. F. Basile

Advanced CMOS Devices

Fully Depleted Devices: FDSOI and FinFET; Bruce Doris, Ali Khakifirooz, Kangguo Cheng, and Terence Hook

Fully Depleted SOI Technology Overview; Bich-Yen Nguyen, Frederic Allibert, Christophe Marville, and Carlos Mazure

FinFETs: Designing for New Logic Technology; W. P. Maszara

Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures; Barry P. Linder, Eduard A. Cartier, Siddarth A. Krishnan, Chunyan E. Tian, and Vijay Narayanan

High-Mobility Channels; Nadine Collaert

2-D InAs XOI FETs: Fabrication and Device Physics; Rehan Kapadia, Kuniharu Takei, Hui Fang, and Ali Javey

Post-CMOS Device Concepts

Beyond-CMOS Devices; An Chen

Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing; Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, and Siegfried Selberherr

Four-State Hybrid Spintronics–Straintronics for Ultralow Power Computing; Noel D’Souza, Jayasimha Atulasimha, and Supriyo Bandyopadhyay

Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics; Takeo Ohno

Elements of Carbon Electronics

Physics-Based Compact Graphene Device Modeling; Kristen Parrish and Deji Akinwande

Carbon Nanotube Vertical Interconnects: Prospects and Challenges; S. Vollebregt, C. I. M. Beenakker, and R. Ishihara

Graphene Nanosheet as Ultrathin Barrier; Yuda Zhao and Yang Chai

Über Autor(innen)

Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.