Nonvolatile Semiconductor Memory Technology

A Comprehensive Guide to Understanding and Using Nvsm Devices
1. Auflage 1997
ISBN: 978-0-7803-1173-2
Verlag: Wiley

Buch, Englisch, 590 Seiten, Format (B × H): 183 mm x 260 mm, Gewicht: 1339 g

"Complete dependence on semiconductor vendors' application notes and data sheets is now a thing of the past thanks to this all-in-one comparison text on nonvolatile semiconductor memory (NVSM) technology. Working electronics engineers can now refer to this book to access the technical data and applications-focused perspective they need to make intelligent decisions regarding the selection, specification, procurement, and application of NVSM devices.

The most comprehensive book in the field, NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY gathers expertly-written information scattered throughout device literature in a single, well-balanced volume. This book features an in-depth overview accompanied by applications-oriented chapters on device reliability and endurance, radiation tolerance, as well as device physics and design. It is an essential reference for electronics engineers."

Sponsored by:
IEEE Components, Packaging, and Manufacturing Technology Society, IEEE Solid-State Circuits Council/Society.

Autoren/Hrsg.

Brown, William D

Brewer, Joe

Inhaltsverzeichnis

List of Contributors.

List of Acronyms.

Foreword.

Basics of Nonvolatile Semiconductor Memory Devices (G. Groeseneken, et al.).

Floating Gate Planar Devices (H. Lin & R. Ramaswami).

Floating Gate Nonplanar Devices (H. Wegener & W. Owen).

Floating Gate Flash Devices (M. Gill & S. Lai).

SONOS Nonvolatile Semiconductor Memories (M. White & F. Libsch).

Reliability and NVSM Reliability (Y. Hsia & V. Tyree).

Radiation Tolerance (G. Messenger).

Procurement Considerations (D. Sweetman).

Bibliography (W. Brown).

Index.

Editors' Biographies.

Über Autor(innen)

About the Editors William D. Brown is a university professor and head of the Department of Electrical Engineering at the University of Arkansas. As a Member of the Technical Staff at Sandia Laboratories in Albuquerque, NM, from 1969-1977, Dr. Brown initiated Sandia s research and development effort on metal-nitride-oxide-silicon (MNOS) device technology. After joining the faculty at the University of Arkansas in 1977, his nonvolatile semiconductor memory research concentrated on the synthesis and characterization of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride for application in MNOS and SNOS memory devices. Dr. Brown has served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.

Joe E. Brewer is a Senior Advisory Engineer at the Northrop Grumman Corporation Electronic Sensors and Systems Division located near Baltimore, MD. Throughout his 36-year engineering career, Dr. Brewer has been engaged in the development of state-of-the-art microelectronic technology. He has been both a developer and user of NVSM devices. He has had extensive experiences with MNOS block-oriented devices and storage systems, as well as a variety of SONOS devices. Dr. Brewer has also served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.