Bi Silicon-Based High-Sensitivity Broadband Receiver

1. Auflage 2024
ISBN: 978-981-97-0881-9
Verlag: Springer Singapore
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 179 Seiten

This book presents various design theories and methodologies for silicon-based high-sensitivity broadband receivers, including millimeter-wave radiometer chips and photoelectric receivers, which are core elements in imaging systems, data centers, and telecommunication infrastructures. As a key module in application systems, the high-sensitivity broadband receiver, not only attracts the attention of engineers and researchers in the radio-frequency and optoelectronic fields, but also garners significant interest from other disciplines, including optics, communications, and security. 

The book introduces various silicon-based critical design technologies aim to overcome the limitations inherent in silicon devices, distinctly enhancing sensitivity with a broad bandwidth. These innovative design methodologies, initially proposed and subsequently validated through meticulous measurements, represent a pioneering contribution. The book provides readers with detailed insights into design intricacies and considerations. Its audience includes undergraduate and graduate students with a specific interest in RF/optoelectronic receiver technology, along with researchers and engineers engaged in the study of imaging systems, data centers, or other communication applications.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Bi, Xiaojun

Inhaltsverzeichnis

Chapter 1 Background of High-Sensitivity Receiver.- Chapter 2 Silicon Device Limitations.- Chapter 3 High-Sensitivity Radiometer Architecture.- Chapter 4 High Sensitivity W-band Radiometer.- Chapter 5 Interstage Reflectionless Radiometer.- Chapter 6 A Dual-band Radiometer Utilizing a Distributed Active Hot- and Cold- load.- Chapter 7 High Sensitivity Optical Receiver Architecture.- Chapter 8 Ultra-Large Dynamic Range CMOS Transimpedance Amplifier.- Chapter 9 High Sensitivity and Dynamic-Range 25 GBaud Silicon Receiver.- Chapter 10 Summary and Conclusions

Über Autor(innen)

Dr. Xiaojun Bi is a full professor at School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. He received the B.S. and M.S. degrees from Huazhong University of Science and Technology (HUST), Wuhan, China, in 2005 and 2007, respectively, and Ph.D. degree from the National University of Singapore (NUS), Singapore in 2013. 
From 2007 to 2008, he worked as a research associate in the Institute of Micro-electronics, Chinese Academy of Sciences (IMECAS), Beijing, China. From 2009 to 2013, he was a research scholar with NUS and Institute of Micro-electronics (IME), Agency for Science, Technology and Research (A*STAR) engaged in silicon-based millimeter-wave ICs for THz imaging and Gb/s wireless communication. From 2013 to 2015, he was a research scientist with IME, A*STAR and worked on high-speed IC design. In Dec. 2014, he joined the School of Optical and Electronic Information/School of Integrated Circuits, HuazhongUniversity of Science and Technology, Wuhan, China, where he has been a full professor since Nov. 2020. 

His current research interests include IC design for high-speed communications and mmWave/THz imaging. More specifically, Dr. BI and his team have developed silicon-based wideband driver amplifier, transimpedance amplifier and multiplexer for 4×25 GB/56 GB/100 GB+ wireline communications, silicon-based W-band and V-band high-sensitivity receivers and hybrid modules for imaging and remote sensing including the world’s first single-pole double-throw distributed amplifier that achieves the lowest switching loss on silicon at W-band, silicon-based Q-band power amplifier and transmitter for high-speed wireless communications. 
Dr. Bi served as an associate editor for IEEE Access (2019-2022). He is a technical reviewer for Journal of Solid-State Circuits, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Microwave Theory and Techniques, etc.