Bhugra / Piazza Piezoelectric MEMS Resonators

1. Auflage 2017
ISBN: 978-3-319-28688-4
Verlag: Springer Nature Switzerland
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 423 Seiten

Reihe: Microsystems and Nanosystems

This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include:Widely-used piezoelectric materials, as well as materials in which there is emerging interestPrinciple of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devicesLarge scale manufacturing approaches, with a focus on the practical aspects associated with testing and qualificationExamples of commercialization paths for piezoelectric MEMS resonators in the timing and the filter markets...and more!The authors present industry and academic perspectives, making this book ideal for engineers, graduate students, and researchers.


Harmeet 'Mitu' Bhugra lead the development of the world's first PiezoElectric MEMS timing and sensor products at IDT. He holds 22 US patents and has published multiple technical papers and given multiple talks on MEMS technology.
Prof. Gianluca Piazza is an Associate Professor in the Electrical and Computer Engineering Department at Carnegie Mellon University.

Autoren/Hrsg.

Bhugra, Harmeet

Piazza, Gianluca

Inhaltsverzeichnis

1;Preface;5
2;Contents;8
3;Contributors;10
4;Part I Materials for Piezoelectric MEMS Resonators;12
4.1;1 AlN Thin Film Processing and Basic Properties;13
4.1.1;1.1 Introduction;13
4.1.2;1.2 Growth of AlN Thin Films by Reactive Magnetron Sputter Deposition;19
4.1.2.1;1.2.1 Process for c-Axis Textured, Piezoelectric Thin Films;19
4.1.2.2;1.2.2 The Impact of Substrate Roughness: Film Evolution with Thickness;28
4.1.2.3;1.2.3 Further Growth Issues: Oxygen Impuritiesand Regrowth Issue;30
4.1.3;1.3 Properties and Characterization;31
4.1.3.1;1.3.1 Efforts in Ab Initio Calculations;40
4.1.4;1.4 AlN-ScN Alloy Thin Films;40
4.1.5;References;43
4.2;2 Lead Zirconate Titanate (PZT) for M/NEMS;48
4.2.1;2.1 PZT Thin Films;48
4.2.1.1;2.1.1 Deposition;49
4.2.1.2;2.1.2 Patterning Techniques;55
4.2.1.3;2.1.3 Device Design Concerns;59
4.2.1.4;2.1.4 PZT-Based Resonant Devices;62
4.2.1.5;2.1.5 Summary;73
4.2.2;References;75
4.3;3 Gallium Nitride for M/NEMS;81
4.3.1;3.1 Introduction;81
4.3.1.1;3.1.1 A Bit of History;81
4.3.1.2;3.1.2 GaN Technology Enabling MEMS;82
4.3.1.3;3.1.3 Benefits of GaN;83
4.3.2;3.2 Transduction Mechanisms in Resonant GaN Devices;85
4.3.2.1;3.2.1 Passive Piezoelectric Transduction;85
4.3.2.1.1;Passive Piezoelectric GaN Resonators with Top and Bottom Electrodes;85
4.3.2.1.2;Lateral Excitation of GaN Resonators;86
4.3.2.1.3;Metal-Free Transduction with 2DEG;88
4.3.2.2;3.2.2 Piezoresistive Transduction;88
4.3.2.3;3.2.3 GaN Resonant Body Transistors;91
4.3.2.3.1;Transistor Sensing in Piezoelectric Resonators;92
4.3.2.3.2;Flexural Resonant Body Transistors;93
4.3.2.3.3;Bulk Wave Resonant Body Transistors;93
4.3.3;3.3 Applications;94
4.3.3.1;3.3.1 GAN-Based Physical Resonant Sensors;94
4.3.3.2;3.3.2 Frequency Synthesizers and Timing;97
4.3.4;3.4 Future Outlook;98
4.3.5;References;102
4.4;4 Lithium Niobate for M/NEMS Resonators;107
4.4.1;4.1 Historical Development of Lithium Niobate Material and Thin Films;108
4.4.2;4.2 Material Properties of Lithium Niobate;111
4.4.3;4.3 Bulk Acoustic Modes in Lithium Niobate Thin Films;113
4.4.4;4.4 Micromachining Lithium Niobate Thin Films;119
4.4.5;4.5 Design and Performance of Lithium Niobate Devices;126
4.4.6;4.6 Discussion and Potential Applications of LithiumNiobate Devices;131
4.4.7;References;133
5;Part II Design of Piezoelectric MEMS Resonators;138
5.1;5 Quality Factor and Coupling in Piezoelectric MEMS Resonators;139
5.1.1;5.1 Introduction;139
5.1.2;5.2 Quality Factor;139
5.1.2.1;5.2.1 Sources of Loss;141
5.1.2.1.1;Intrinsic Losses;142
5.1.2.1.2;Extrinsic Losses;146
5.1.2.2;5.2.2 Discussion on Loss;149
5.1.3;5.3 Coupling Factor;150
5.1.3.1;5.3.1 Piezoelectric Coupling Factor;150
5.1.3.2;5.3.2 Effective Electromechanical Coupling Factor;151
5.1.3.3;5.3.3 Discussion on Coupling Factor;153
5.1.4;5.4 Conclusion (Figure of Merit);154
5.1.5;References;154
5.2;6 Flexural Piezoelectric Resonators;159
5.2.1;6.1 Introduction;159
5.2.2;6.2 Mechanics of Laminates;159
5.2.2.1;6.2.1 Natural Frequencies;161
5.2.2.2;6.2.2 Thin-Film Piezo-Coefficient;161
5.2.3;6.3 Vibration Analysis via Energy Methods;162
5.2.4;6.4 One-Dimensional Resonators;164
5.2.4.1;6.4.1 Clamped-Clamped Bean Analysis;166
5.2.4.2;6.4.2 Natural Frequencies;168
5.2.4.3;6.4.3 Two-Port Resonators;168
5.2.5;6.5 Two-Dimensional Resonators;170
5.2.5.1;6.5.1 Square Plates;171
5.2.5.2;6.5.2 Round Plates;174
5.2.5.3;6.5.3 7 Example – Predicting Coupling to Multiple Vibration Modes;176
5.2.6;References;178
5.3;7 Laterally Vibrating Piezoelectric MEMS Resonators;180
5.3.1;7.1 Introduction;180
5.3.2;7.2 Operating Principle;181
5.3.3;7.3 Materials;188
5.3.4;7.4 Frequency Scaling;190
5.3.5;7.5 Fabrication Techniques;191
5.3.6;7.6 Examples of Demonstrated Prototypes;193
5.3.7;References;202
5.4;8 BAW Piezoelectric Resonators;208
5.4.1;8.1 Introduction;208
5.4.2;8.2 BVD Model;209
5.4.3;8.3 Mason's Equivalent Circuit Model;214
5.4.4;8.4 Resonator Structures;217
5.4.5;8.5 Material Choice;219
5.4.6;8.6 Lateral Wave Propagation;220
5.4.7;8.7 Summary;223
5.4.8;References;223
5.5;9 Shear Piezoelectric MEMS Resonators;226
5.5.1;9.1 Introduction to MEMS Resonators;226
5.5.2;9.2 Piezoelectric Shear Modes;228
5.5.3;9.3 Piezoelectric Thickness-Shear Principles;228
5.5.4;9.4 Quartz Crystal Cut Angles;232
5.5.5;9.5 Frequency Dependence on Plate Dimensions;233
5.5.6;9.6 Thickness-Shear-Mode Simulation;234
5.5.7;9.7 Frequency Dependence on Temperature;235
5.5.8;9.8 The Equivalent Circuit;237
5.5.9;9.9 Fabrication of Thickness-Shear Devices;240
5.5.10;9.10 Examples of Prototype Devices;242
5.5.11;9.11 Future Development;246
5.5.12;9.12 Summary;246
5.5.13;References;247
5.6;10 Temperature Compensation of Piezo-MEMS Resonators;248
5.6.1;10.1 Introduction;248
5.6.2;10.2 Temperature Sensitivity of Resonance Frequency;249
5.6.3;10.3 Passive Compensation Techniques;250
5.6.3.1;10.3.1 Compensation by Resonator Composition Design;250
5.6.3.2;10.3.2 Compensation by Material Properties Engineering;253
5.6.3.3;10.3.3 Other Passive Compensation Techniques;256
5.6.4;10.4 Active Compensation Techniques;257
5.6.5;References;260
5.7;11 Computational Modeling Challenges;262
5.7.1;11.1 Introduction;262
5.7.2;11.2 Challenges in Computing the Frequency Response;263
5.7.2.1;11.2.1 Motivation;263
5.7.2.2;11.2.2 Computing the Frequency Response;265
5.7.3;11.3 Modeling Energy Loss Mechanisms;270
5.7.3.1;11.3.1 Anchor Loss;271
5.7.3.2;11.3.2 Thermoelastic Dissipation;274
5.7.3.3;11.3.3 Fluid Damping;276
5.7.4;11.4 Static and Dynamic Nonlinearity;278
5.7.4.1;11.4.1 Residual Stress;279
5.7.4.2;11.4.2 Nonlinearity from High Power;280
5.7.5;11.5 Conclusion;281
5.7.6;References;281
6;Part III Manufacturing and Reliability of Piezoelectric MEMS Resonators;285
6.1;12 Fabrication Process Flows for Implementation of Piezoelectric MEMS Resonators;286
6.1.1;12.1 Introduction;287
6.1.2;12.2 Deposition of Piezoelectric AlN;288
6.1.3;12.3 Fabrication Process Flow of Piezo-Only Resonators;291
6.1.4;12.4 Fabrication Process Flow of Piezo-on-Substrate Resonators;292
6.1.5;12.5 Sidewall AlN Process for 3D Transduction of MEMS Resonators;295
6.1.6;12.6 Fabrication Process Flow for AlGaN/GaN Resonators with Integrated HEMT Read-Out;297
6.1.7;References;299
6.2;13 Reliability and Quality Assessment (Stability and Packages);302
6.2.1;13.1 A Long and Demanding History Sets the Demands for the Resonators;302
6.2.2;13.2 The Challenges of FCP Devices: Longevity and Critical Applications Are Common;303
6.2.3;13.3 Where Did the Rules of Evaluation Come from?;304
6.2.4;13.4 The Challenges of an IC and Electromechanical Device;304
6.2.5;13.5 With FCP Long History, So Much Is a Level of Expectation;305
6.2.6;13.6 US Military Standards;306
6.2.7;13.7 JEDEC Standards;307
6.2.8;13.8 Other Standards;307
6.2.9;13.9 In-Process and Production Monitoring;308
6.2.10;13.10 Other Specifications for Frequency Control Products;309
6.2.10.1;13.10.1 Response to Temperature Change;309
6.2.10.2;13.10.2 Perturbations;309
6.2.10.3;13.10.3 Power Supply Noise Sensitivity;309
6.2.10.4;13.10.4 System-Injected Noise;310
6.2.10.5;13.10.5 Low-Frequency Wander;310
6.2.10.6;13.10.6 Long-Term Aging;310
6.2.10.7;13.10.7 EMI Radiation;312
6.2.11;13.11 What Are the Expectations of the Future?;312
6.2.11.1;13.11.1 The Device Sizes;312
6.2.11.2;13.11.2 The Device Supply Voltages and Power;312
6.2.11.3;13.11.3 The Device Cost;313
6.2.11.4;13.11.4 Self-Test;313
6.3;14 Large Volume Testing and Calibration;314
6.3.1;14.1 Purpose of Testing in Manufacturing;316
6.3.2;14.2 Considerations in Testing in Manufacturing;316
6.3.3;14.3 Forming a Testing Strategy;317
6.3.4;14.4 Methods of Rejection;318
6.3.4.1;14.4.1 Electrical Rejections;318
6.3.4.1.1;Resonance Check;318
6.3.4.1.2;Spec Limits Rejection;319
6.3.4.1.3;Dynamic Spec Limits Rejection;320
6.3.4.1.4;Yield Limit Rejection;321
6.3.4.1.5;Geographical Rejection Including Expansion;322
6.3.4.1.6;Rejection by Electrical Signature;322
6.3.4.1.7;Rejection Beyond Resonance Parameters;324
6.3.4.2;14.4.2 Visual Rejections;324
6.3.4.2.1;Seal Defect Rejection;324
6.3.4.2.2;Delaminated Cap Rejection;325
6.3.4.2.3;Bond Void Rejection;326
6.3.4.2.4;Edge Die Rejection;327
6.3.4.2.5;Delaminated Metal Pad Rejection;327
6.3.5;14.5 Test and Rejection Analyses Flow;328
6.3.6;14.6 Consideration in Test Implementation;328
6.3.6.1;14.6.1 Defect Coding System;328
6.3.6.2;14.6.2 Interface Design for Test Programs;329
6.3.6.3;14.6.3 Calibration of Prober Setup;330
6.3.6.4;14.6.4 Data Processing and Automation;330
6.3.7;14.7 Test Time Reduction;331
6.3.7.1;14.7.1 Multi-site Testing;331
6.3.7.2;14.7.2 Test Program Optimization;332
6.3.7.3;14.7.3 Hardware or Software;332
6.3.7.4;14.7.4 Data File Formats;333
6.3.8;14.8 Calibration;333
6.3.9;14.9 Conclusion;334
6.3.10;References;334
7;Part IV Real World Implementations;335
7.1;15 High Frequency Oscillators for Mobile Devices;336
7.1.1;15.1 Understanding the Diversity of Timing Requirements in Mobile Devices;339
7.1.2;15.2 Significance of Acoustic Devices;341
7.1.2.1;15.2.1 The Significance of Resonator Q;341
7.1.2.2;15.2.2 What Is Preventing Us Today From Using an Integrated Circuit Solution to Provide Time and Frequency;343
7.1.3;15.3 Phase Noise in Oscillators;343
7.1.4;15.4 Historical Developments of the Sand 9 Piezoelectric MEMS Resonator;347
7.1.4.1;15.4.1 Early Prototypes;349
7.1.4.2;15.4.2 A Chip-Scale Package VC-TCXO Replacement Using Piezoelectric MEMS Resonators;350
7.1.4.3;15.4.3 Piezoelectric MEMS Concept for a 125 MHz VC-TCXO;357
7.1.5;15.5 Integrated MEMS Resonator;367
7.1.5.1;15.5.1 Integrated Cellular Transceiver;369
7.1.6;15.6 Results;371
7.1.7;15.7 Understanding the MEMS Timing Business;373
7.1.8;15.8 The Business Case for MEMS Cellular Timing Devices;376
7.1.9;15.9 Where Are We Today?;379
7.1.9.1;15.9.1 When Is the MEMS Timing Revolution Going to Happen?;380
7.1.9.2;15.9.2 How to Imitate a Xtal with an LLQ?;380
7.1.10;15.10 The Value of MEMS Timing;382
7.1.11;15.11 Conclusions;382
7.1.12;References;384
7.2;16 BAW Filters and Duplexers for Mobile Communication;387
7.2.1;16.1 Introduction;387
7.2.2;16.2 Short History of BAW;388
7.2.3;16.3 Types of Filters Used in Smartphones;390
7.2.4;16.4 Evolution of Size and Performance;392
7.2.5;16.5 Insertion Loss;394
7.2.6;16.6 Port Impedance and Matching;395
7.2.7;16.7 Rejection and Isolation;399
7.2.8;16.8 Power Handling and Reliability;402
7.2.9;16.9 Temperature Effects;404
7.2.10;16.10 Group Delay;405
7.2.11;16.11 Linearity of Filters and Duplexers;406
7.2.12;16.12 Packaging and RF Module Integration;407
7.2.13;16.13 Filter Design Methodology;409
7.2.14;16.14 Solutions for Carrier Aggregation in Long-Term Evolution (LTE);412
7.2.15;References;413
8;Index;414