Bentarzi Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties
1. Auflage 2011
ISBN: 978-3-642-16304-3
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 106 Seiten

Reihe: Engineering Materials

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Autoren/Hrsg.

Bentarzi, Hamid

Inhaltsverzeichnis

1;Transport in Metal-Oxide-Semiconductor Structures;2
1.1;Preface;4
1.2;Contents;6
1.3;List of Symbols, Abbreviations and Physical Constants;9
1.4;1 Introduction;12
1.4.1;References;15
1.5;2 The MOS Structure;16
1.5.1;2.1…Introduction;16
1.5.2;2.2…A Simple Physical Approach Applied to MOS Structure;16
1.5.2.1;2.2.1 Basic Concepts and Quantities;17
1.5.2.2;2.2.2 Definition of Potentials;18
1.5.3;2.3…Ideal MOS Capacitor;18
1.5.3.1;2.3.1 Accumulation;19
1.5.3.2;2.3.2 Depletion;20
1.5.3.3;2.3.3 Inversion;22
1.5.3.3.1;Low frequency Capacitance;22
1.5.3.3.2;High Frequency capacitance;23
1.5.4;2.4…The Actual (Non-ideal) MOS Structure;24
1.5.4.1;2.4.1 The Metal-Silicon Work Function Difference;24
1.5.4.2;2.4.2 Effect of the Charge Distributed in the Oxide;25
1.5.5;References;26
1.6;3 The MOS Oxide and Its Defects;28
1.6.1;3.1…Introduction;28
1.6.2;3.2…Oxide Growth Techniques;28
1.6.3;3.3…Thermal Oxidation;29
1.6.3.1;3.3.1 Dry Oxidation;30
1.6.3.2;3.3.2 Wet Oxidation;31
1.6.3.2.1;Bubblers;31
1.6.3.2.2;Flash System;31
1.6.3.2.3;Dryox System;32
1.6.4;3.4…Anodic Oxidation;32
1.6.5;3.5…Rapid Thermal Oxidation;32
1.6.6;3.6…MOS Oxide Defects;32
1.6.6.1;3.6.1 The Interface Trapped Charge;33
1.6.6.2;3.6.2 The Fixed Oxide Charge;35
1.6.6.3;3.6.3 The Oxide Trapped Charge;36
1.6.6.4;3.6.4 The Mobile Ionic Charge;37
1.6.7;References;38
1.7;4 Review of Transport Mechanism in Thin Oxides of MOS Devices;40
1.7.1;4.1…Introduction;40
1.7.2;4.2…Electronic Conduction;40
1.7.2.1;4.2.1 The Schottky (or Thermionic) Conduction;41
1.7.2.2;4.2.2 The Tunneling Conduction;41
1.7.2.3;4.2.3 The Fowler--Nordheim Conduction;43
1.7.2.4;4.2.4 The Frenkel-Poole Conduction;43
1.7.2.5;4.2.5 The Hopping Conduction;43
1.7.2.6;4.2.6 The Space Charge-Limited Current;44
1.7.2.6.1;Weak Injection;44
1.7.2.6.2;Strong Injection;44
1.7.2.6.3;Very Strong Injection;44
1.7.3;4.3…Ionic Conduction;45
1.7.3.1;4.3.1 Ionic Current Transport Equation;46
1.7.3.1.1;Drift Current;46
1.7.3.1.2;Diffusion Current;46
1.7.4;4.4…Summary;46
1.7.5;References;47
1.8;5 Experimental Techniques;49
1.8.1;5.1…Introduction;49
1.8.2;5.2…High Frequency MOS C--V Measurement under BTS;51
1.8.2.1;5.2.1 Determination of the Flat-Band Voltage;51
1.8.2.2;5.2.2 How the Mobile Charges Effect can be Separated;52
1.8.2.3;5.2.3 Theory;53
1.8.2.4;5.2.4 Experimental Results and Discussion;54
1.8.3;5.3…TVS Technique;55
1.8.3.1;5.3.1 Theory;58
1.8.3.2;5.3.2 Earlier Investigation;59
1.8.4;5.4…TSIC Technique;61
1.8.4.1;5.4.1 Theory;62
1.8.5;5.5…Charge-pumping Associated with BTS Technique;63
1.8.5.1;5.5.1 Theory;63
1.8.5.2;5.5.2 Separation of the Mobile Charge Effect;64
1.8.5.3;5.5.3 Experimental Results and Discussion;65
1.8.6;References;67
1.9;6 Theoretical Approaches of Mobile Ions Density Distribution Determination;69
1.9.1;6.1…Introduction;69
1.9.2;6.2…Problem Formulation;70
1.9.3;6.3…Earlier Analytical Approaches;71
1.9.3.1;6.3.1 Analytical Approach of Chou;71
1.9.3.2;6.3.2 Analytical Approach of Tangena et al.;73
1.9.3.3;6.3.3 Analytical Approach of Romanov et al.;75
1.9.4;6.4…Empirical Model;77
1.9.4.1;6.4.1 General Formulation;78
1.9.4.2;6.4.2 First Empirical Model;79
1.9.4.3;6.4.3 Results and Discussions;80
1.9.4.4;6.4.4 Second Empirical Model;81
1.9.4.4.1;Uniform Rectangular Distribution;81
1.9.4.4.2;The Exponential Distribution;83
1.9.4.4.3;The Gaussian Distribution;84
1.9.4.5;6.4.5 Results and Discussion;84
1.9.5;6.5…Numerical Approach;85
1.9.5.1;6.5.1 Numerical Solution;86
1.9.5.2;6.5.2 Simulation Results and Discussion;88
1.9.5.3;6.5.3 Experimental and Simulation Results;89
1.9.6;6.6…Conclusion;90
1.9.7;References;91
1.10;7 Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide;93
1.10.1;7.1…Introduction;93
1.10.2;7.2…Theoretical Model of Mobile Ions Density Distribution;94
1.10.2.1;7.2.1 Preliminary Considerations;94
1.10.2.2;7.2.2 One-Dimensional Distribution Model of Mobile Ions;96
1.10.3;7.3…I--V Characteristic Determination;102
1.10.4;7.4…Experimental Results and Discussion;103
1.10.5;7.5…Conclusion;110
1.10.6;References;111
1.11;Index;113