Baliga Advanced Power MOSFET Concepts

1. Auflage 2010
ISBN: 978-1-4419-5917-1
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 562 Seiten

During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. 'Advanced Power MOSFET Concepts' provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Autoren/Hrsg.

Baliga, B. Jayant

Inhaltsverzeichnis

1;Advanced Power MOSFET Concepts;3
1.1;Dedication;5
1.2;Preface;7
1.3;References;9
1.4;Contents;11
1.5;Chapter 1: Introduction;17
1.5.1;1.1 Ideal Power Switching Waveforms;18
1.5.2;1.2 Ideal and Typical Power MOSFET Characteristics;19
1.5.3;1.3 Typical Power MOSFET Structures;21
1.5.4;1.4 Ideal Drift Region for Unipolar Power Devices;22
1.5.5;1.5 Charge-Coupled Structures: Ideal Specific On-Resistance;24
1.5.6;1.6 Revised Breakdown Models for Silicon;28
1.5.7;1.7 Typical Power MOSFET Applications;34
1.5.7.1;1.7.1 DC-DC Sync-Buck Converter;34
1.5.7.2;1.7.2 Variable-Frequency Motor Drive;35
1.5.8;1.8 Summary;37
1.5.9;References;37
1.6;Chapter 2: D-MOSFET Structure;38
1.6.1;2.1 The D-MOSFET Structure;38
1.6.2;2.2 Power D-MOSFET On-Resistance;40
1.6.2.1;2.2.1 Channel Resistance;43
1.6.2.2;2.2.2 Accumulation Resistance;44
1.6.2.3;2.2.3 JFET Resistance;44
1.6.2.4;2.2.4 Drift Region Resistance;46
1.6.2.5;2.2.5 N+ Substrate Resistance;47
1.6.2.6;2.2.6 Drain and Source Contact Resistance;47
1.6.2.7;2.2.7 Total On-Resistance;48
1.6.2.7.1;2.2.7.1 Simulation Results;49
1.6.3;2.3 Blocking Voltage;52
1.6.3.1;2.3.1 Impact of Edge Termination;53
1.6.3.2;2.3.2 Impact of Graded Doping Profile;54
1.6.3.2.1;2.3.2.1 Simulation Results;55
1.6.4;2.4 Output Characteristics;59
1.6.4.1;2.4.1 Simulation Example;60
1.6.5;2.5 Device Capacitances;61
1.6.5.1;2.5.1 Simulation Example;64
1.6.6;2.6 Gate Charge;66
1.6.6.1;2.6.1 Simulation Example;67
1.6.7;2.7 Device Figures of Merit;69
1.6.8;2.8 Discussion;71
1.6.9;References;76
1.7;Chapter 3: U-MOSFET Structure;77
1.7.1;3.1 The U-MOSFET Structure;77
1.7.2;3.2 Power U-MOSFET On-Resistance;80
1.7.2.1;3.2.1 Channel Resistance;81
1.7.2.2;3.2.2 Accumulation Resistance;82
1.7.2.3;3.2.3 Drift Region Resistance;82
1.7.2.4;3.2.4 Total On-Resistance;83
1.7.2.4.1;3.2.4.1 Simulation Results;84
1.7.3;3.3 Blocking Voltage;87
1.7.3.1;3.3.1 Impact of Edge Termination;88
1.7.3.2;3.3.2 Impact of Graded Doping Profile;88
1.7.3.2.1;3.3.2.1 Simulation Results;89
1.7.4;3.4 Output Characteristics;94
1.7.4.1;3.4.1 Simulation Example;94
1.7.5;3.5 Device Capacitances;95
1.7.5.1;3.5.1 Simulation Example;98
1.7.6;3.6 Gate Charge;100
1.7.6.1;3.6.1 Simulation Example;102
1.7.7;3.7 Device Figures of Merit;104
1.7.8;3.8 Thick Trench Bottom Oxide Structure;106
1.7.8.1;3.8.1 On-Resistance;106
1.7.8.2;3.8.2 Reverse Transfer Capacitance;106
1.7.8.3;3.8.3 Gate Charge;108
1.7.8.4;3.8.4 Device Figures-of-Merit;109
1.7.8.4.1;3.8.4.1 Simulation Results;110
1.7.9;3.9 High Voltage Devices;115
1.7.9.1;3.9.1 Simulation Results;115
1.7.10;3.10 Inductive Load Turn-Off Characteristics;120
1.7.10.1;3.10.1 Simulation Results;125
1.7.11;3.11 Discussion;126
1.7.12;References;131
1.8;Chapter 4: SC-MOSFET Structure;132
1.8.1;4.1 The SC-MOSFET Structure;133
1.8.2;4.2 Power SC-MOSFET On-Resistance;135
1.8.2.1;4.2.1 Channel Resistance;137
1.8.2.2;4.2.2 Accumulation Resistance;137
1.8.2.3;4.2.3 JFET Resistance;138
1.8.2.4;4.2.4 Drift Region Resistance;139
1.8.2.5;4.2.5 Total On-Resistance;140
1.8.2.5.1;4.2.5.1 Simulation Results;141
1.8.3;4.3 Blocking Voltage;146
1.8.3.1;4.3.1 Impact of Edge Termination;146
1.8.3.1.1;4.3.1.1 Simulation Results;147
1.8.4;4.4 Output Characteristics;151
1.8.4.1;4.4.1 Simulation Example;152
1.8.5;4.5 Device Capacitances;152
1.8.5.1;4.5.1 Simulation Example;157
1.8.6;4.6 Gate Charge;160
1.8.6.1;4.6.1 Simulation Example;162
1.8.7;4.7 Device Figures of Merit;164
1.8.8;4.8 Discussion;166
1.8.9;References;171
1.9;Chapter 5: CC-MOSFET Structure;172
1.9.1;5.1 The CC-MOSFET Structure;173
1.9.2;5.2 Charge-Coupling Physics and Blocking Voltage;175
1.9.2.1;5.2.1 Simulation Results;186
1.9.3;5.3 Power CC-MOSFET On-Resistance;199
1.9.3.1;5.3.1 Channel Resistance;200
1.9.3.2;5.3.2 Accumulation Resistance for Current Spreading Region;201
1.9.3.3;5.3.3 Drift Region Resistance;202
1.9.3.4;5.3.4 Total On-Resistance;203
1.9.3.4.1;5.3.4.1 Simulation Results;205
1.9.4;5.4 Output Characteristics;208
1.9.4.1;5.4.1 Simulation Example;208
1.9.5;5.5 Device Capacitances;209
1.9.5.1;5.5.1 Simulation Example;219
1.9.6;5.6 Gate Charge;222
1.9.6.1;5.6.1 Simulation Example;227
1.9.7;5.7 Device Figures of Merit;230
1.9.8;5.8 Edge Termination;233
1.9.8.1;5.8.1 Simulation Example;235
1.9.9;5.9 High Voltage Devices;237
1.9.9.1;5.9.1 Simulation Results;237
1.9.10;5.10 Process Sensitivity Analysis;245
1.9.11;5.11 Discussion;248
1.9.12;References;252
1.10;Chapter 6: GD-MOSFET Structure;253
1.10.1;6.1 The GD-MOSFET Structure;254
1.10.2;6.2 Charge-Coupling Physics and Blocking Voltage;256
1.10.2.1;6.2.1 Simulation Results;262
1.10.3;6.3 Power GD-MOSFET On-Resistance;275
1.10.3.1;6.3.1 Channel Resistance;277
1.10.3.2;6.3.2 Accumulation Resistance for Current Spreading Region;278
1.10.3.3;6.3.3 Drift Region Resistance;278
1.10.3.4;6.3.4 Total On-Resistance;280
1.10.3.4.1;6.3.4.1 Simulation Results;282
1.10.4;6.4 Output Characteristics;283
1.10.4.1;6.4.1 Simulation Example;284
1.10.5;6.5 Device Capacitances;285
1.10.5.1;6.5.1 Simulation Example;288
1.10.6;6.6 Gate Charge;290
1.10.6.1;6.6.1 Simulation Example;292
1.10.7;6.7 Device Figures of Merit;295
1.10.8;6.8 Edge Termination;297
1.10.9;6.9 High Voltage Devices;297
1.10.9.1;6.9.1 Simulation Results;298
1.10.10;6.10 Process Sensitivity Analysis;318
1.10.11;6.11 Inductive Load Turn-Off Characteristics;322
1.10.11.1;6.11.1 Simulation Results;327
1.10.12;6.12 Discussion;329
1.10.13;References;334
1.11;Chapter 7: SJ-MOSFET Structure;335
1.11.1;7.1 The SJ-MOSFET Structure;336
1.11.2;7.2 Charge-Coupling Physics;338
1.11.2.1;7.2.1 Simulation Results;341
1.11.3;7.3 Power SJ-MOSFET On-Resistance;358
1.11.3.1;7.3.1 Channel Resistance;362
1.11.3.2;7.3.2 Accumulation Resistance for Current Spreading Region;363
1.11.3.3;7.3.3 Drift Region Resistance;363
1.11.3.4;7.3.4 Total On-Resistance;365
1.11.3.4.1;7.3.4.1 Simulation Results;366
1.11.4;7.4 Output Characteristics;369
1.11.4.1;7.4.1 Simulation Example;369
1.11.5;7.5 Device Capacitances;369
1.11.5.1;7.5.1 Simulation Example;376
1.11.6;7.6 Gate Charge;379
1.11.6.1;7.6.1 Simulation Example;381
1.11.7;7.7 Device Figures of Merit;383
1.11.8;7.8 Edge Termination;385
1.11.8.1;7.8.1 Simulation Example;386
1.11.9;7.9 High Voltage Devices;390
1.11.9.1;7.9.1 Simulation Results;390
1.11.10;7.10 Process Sensitivity Analysis;393
1.11.11;7.11 Inductive Load Turn-Off Characteristics;397
1.11.11.1;7.11.1 Simulation Results;401
1.11.12;7.12 Discussion;403
1.11.13;References;408
1.12;Chapter 8: Integral Diode;410
1.12.1;8.1 Power MOSFET Body Diode;411
1.12.2;8.2 Computer Power Supplies;411
1.12.2.1;8.2.1 Power U-MOSFET Structure;413
1.12.2.1.1;8.2.1.1 Simulation Results;414
1.12.2.2;8.2.2 Power CC-MOSFET Structure;418
1.12.2.2.1;8.2.2.1 Simulation Results;420
1.12.2.3;8.2.3 Power JBSFET Structure;423
1.12.2.3.1;8.2.3.1 Simulation Results;426
1.12.3;8.3 Motor Control Application;435
1.12.3.1;8.3.1 Power U-MOSFET Structure;436
1.12.3.1.1;8.3.1.1 Simulation Results;437
1.12.3.2;8.3.2 Power JBSFET Structure;441
1.12.3.2.1;8.3.2.1 Simulation Results;441
1.12.3.3;8.3.3 Power GD-MOSFET Structure;448
1.12.3.3.1;8.3.3.1 Simulation Results;450
1.12.3.4;8.3.4 Power GD-JBSFET Structure;454
1.12.3.4.1;8.3.4.1 Simulation Results;456
1.12.3.5;8.3.5 Power SJ-MOSFET Structure;472
1.12.3.5.1;8.3.5.1 Simulation Results;475
1.12.3.6;8.3.6 Power SJ-JBSFET Structure;478
1.12.3.6.1;8.3.6.1 Simulation Results;479
1.12.4;8.4 Discussion;483
1.12.4.1;8.4.1 Low-Voltage Devices;484
1.12.4.2;8.4.2 High-Voltage Devices;485
1.12.5;References;487
1.13;Chapter 9: SiC Planar MOSFET Structures;488
1.13.1;9.1 Shielded Planar Inversion-Mode MOSFET Structure;489
1.13.1.1;9.1.1 Blocking Mode;490
1.13.1.1.1;9.1.1.1 Simulation Results;491
1.13.1.2;9.1.2 Threshold Voltage;495
1.13.1.3;9.1.3 On-State Resistance;497
1.13.1.3.1;9.1.3.1 Channel-Resistance;498
1.13.1.3.2;9.1.3.2 Accumulation-Resistance;498
1.13.1.3.3;9.1.3.3 JFET-Resistance;499
1.13.1.3.4;9.1.3.4 Drift-Resistance;500
1.13.1.3.5;9.1.3.5 Total On-Resistance;500
1.13.1.3.6;9.1.3.6 Impact of Breakdown Voltage;502
1.13.1.3.7;9.1.3.7 Simulation Results;502
1.13.1.4;9.1.4 Capacitances;504
1.13.1.5;9.1.5 Gate Charge;507
1.13.1.5.1;9.1.5.1 Simulation Example;508
1.13.1.6;9.1.6 Device Figures of Merit;509
1.13.1.7;9.1.7 Inductive Load Turn-Off Characteristics;510
1.13.1.7.1;9.1.7.1 Simulation Results;513
1.13.1.8;9.1.8 Body-Diode Characteristics;514
1.13.2;9.2 Shielded Planar ACCUFET Structure;515
1.13.2.1;9.2.1 Blocking Mode;516
1.13.2.1.1;9.2.1.1 Simulation Results;517
1.13.2.2;9.2.2 Threshold Voltage;521
1.13.2.3;9.2.3 On-State Resistance;523
1.13.2.3.1;9.2.3.1 Channel-Resistance;524
1.13.2.3.2;9.2.3.2 Total On-Resistance;524
1.13.2.3.3;9.2.3.3 Impact of Breakdown Voltage;525
1.13.2.3.4;9.2.3.4 Simulation Results;526
1.13.2.4;9.2.4 Capacitances;528
1.13.2.5;9.2.5 Gate Charge;530
1.13.2.5.1;9.2.5.1 Simulation Example;531
1.13.2.6;9.2.6 Device Figures of Merit;533
1.13.2.7;9.2.7 Inductive Load Turn-Off Characteristics;534
1.13.2.7.1;9.2.7.1 Simulation Results;536
1.13.2.8;9.2.8 Body-Diode Characteristics;538
1.13.2.8.1;9.2.8.1 Simulation Results;538
1.13.3;9.3 Discussion;542
1.13.4;References;544
1.14;Chapter 10: Synopsis;545
1.14.1;10.1 Computer Power Supplies;546
1.14.1.1;10.1.1 Inadvertent Turn-On Suppression;547
1.14.1.2;10.1.2 Device Active Area;549
1.14.1.3;10.1.3 Switching Power Losses;550
1.14.1.4;10.1.4 Input Capacitance;550
1.14.1.5;10.1.5 Device Comparison;550
1.14.2;10.2 High Voltage Motor Control;553
1.14.3;10.3 Device Comparison;559
1.14.4;10.4 Summary;562
1.14.5;References;562
1.15;Index;567