Baklanov / Maex / Green Dielectric Films for Advanced Microelectronics

1. Auflage 2007
ISBN: 978-0-470-06541-9
Verlag: John Wiley & Sons
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 508 Seiten, E-Book

Reihe: Wiley Series in Materials for Electronic & Optoelectronic Applications

The topic of thin films is an area of increasing importance inmaterials science, electrical engineering and applied solid statephysics; with both research and industrial applications inmicroelectronics, computer manufacturing, and physical devices.Advanced, high-performance computers, high-definition TV, broadbandimaging systems, flat-panel displays, robotic systems, and medicalelectronics and diagnostics are a few examples of the miniaturizeddevice technologies that depend on the utilization of thin filmmaterials.
This book presents an in-depth overview of the noveldevelopments made by the scientific leaders in the area of moderndielectric films for advanced microelectronic applications.It contains clear, concise explanations of material science ofdielectric films and their problem for device operation, includinghigh-k, low-k, medium-k dielectric films and also specific featuresand requirements for dielectric films used in the packagingtechnology. A broad range of related topics are covered, fromphysical principles to design, fabrication, characterization, andapplications of novel dielectric films.

Autoren/Hrsg.

Baklanov, Mikhail

Maex, Karen

Green, Martin

Inhaltsverzeichnis

Series Preface.
Preface. (Mikhail Baklanov, Martin Green and KarenMaex).
1. Low and Ultralow Dielectric Constant Films Preparedby Plasma-Enhanced Chemical Vapor Deposition. (A.Grill).
2. Spin-On Dielectric Materials. (GeraudDubois, Willi Volksen and Robert D. Miller).
3.Porosity of Low Dielectric Constant Materials.
3.1 Positron Annihilation Spectroscopy. (David W.Gidley, Hua-Gen Peng, and Richard Vallery).
3.2Structure Characterization of Nanoporous InterlevelDielectric Thin Films with X-ray and Neutron Radiation.(Christopher L. Soles, Hae-Jeong Lee, Bryan D. Vogt, Eric K.Lin, Wen-li Wu).
3.3 Ellipsometric Porosimetry. (M. R.Baklanov).
4.Mechanical and Transport Properties of Low-kDielectrics. (J.L. Plawsky, R. Achanta, W. Cho, O.Rodriguez, R. Saxena, and W.N. Gill).
5. Integration of low-k dielectric films in damasceneprocesses. (R.J.O.M. Hoofman, V.H. Nguyen,V. Arnal, M.Broekaart, L.G. Gosset,W.F.A. Besling, M. Fayolle and F.Iacopi).
6. ONO structures and oxynitrides in modern microelectronics.Material science, characterization and application.(Yakov Roizin and Vladimir Gritsenko).
High Dielectric constant Materials.
7. Material Engineering of High-k GateDielectrics. (Akira Toriumi and Koji Kita).
8. PhysicalCharacterisation of ultra-thin high-k dielectric. (T.Conard, H. Bender and W. Vandervorst).
9. Electrical Characterization of Advanced GateDielectrics. (Robin Degraeve, Jurriaan Schmitz,Luigi Pantisano, Eddy Simoen, Michel Houssa, Ben Kaezer, andGuido Groeseneken).
Medium dielectric constant materials.
10. Integration Issues of High-k Gate Dielectrics.(Yasuo Nara).
Dielectric films for interconnects (packaging).
11. Anisotropic Conductive Film (ACF) for AdvancedMicroelectronic Interconnects. (Yi Li, C. P.Wong).
Index.

Über Autor(innen)

Karen Maex, IMEC Fellow, Silicon Process and DeviceTechnology Division, Leuven, Belgium & Professor at KatholiekeUniversiteit Leuven
Mikhail R. Baklanov, Principal Scientist, Silicon Processand Device Technology Division, IMEC, Leuven, Belgium
IMEC is the largest independent microelectronics R&D centrein Europe, with over 1250 staff. R&D ranges from the design ofcomplex single-chip and single-package systems fortelecommunications and multimedia, new process technologies foroptoelectronics, photovoltaics, area-array packing, etc.