Chemical-Mechanical Polishing - Fundamentals and Challenges

Erscheinungsjahr 2000
ISBN: 978-1-55899-473-7
Verlag: Cambridge University Press

Buch, Englisch, 281 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 582 g

Reihe: MRS Proceedings

Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and contamination issues. This book brings together many of the active players in the field to focus on the interdisciplinary nature of these challenges. It reflects, to some extent, the role played by both academic institutions and multinational corporations in opening up the frontiers in the field of CMP for wider dissemination. Both experimental and theoretical contributions are included. Topics include: overview and oxide polishing; pads and related issues; metal polishing - W and Al; copper polishing and related issues; CMP modeling and fluid flow; and particle adhesion and post-polish cleaning.

Autoren/Hrsg.

Babu, S. V

Danyluk, S.

Krishnan, M.

Tsujimura, M.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Part I. Overview and Oxide Polishing; Part II. Pads and Related Issues; Part III. Metal Polishing - W and AI; Part IV. Copper Polishing and Related Issues; Part V. CMP Modeling and Fluid Flow; Part VI. Particle Adhesion and Post-polish Cleaning; Author index; Subject index.