Buch, Englisch, 377 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 735 g
Reihe: IFI Data Base Library
A Comprehensive Bibliography
Buch, Englisch, 377 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 735 g
Reihe: IFI Data Base Library
ISBN: 978-1-4684-6122-0
Verlag: Springer US
The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
A. Technologies.- I. Books.- II. Review Articles.- III. Modeling.- IV. Technologies.- V. Reliability.- VI. VLSI.- B. Properties and Characterization.- I. Books.- II. Review Articles.- III. Electrical Properties.- IV. Optical Properties.- V. Characterization.- VI. Gettering.- VII. Mis as a Research Tool.- C. Dielectric Thin Films.- I. Books.- II. Review Articles.- III. Theory.- IV. Film-Preparation.- V. Physical Measurements.- VI. Film Properties.- VII. Double Dielectrics.- VIII. Organic Dielectrics.- IX. Metal-Dielectric Interface.- X. Passivation.- XI. PSG.
