Semiconductor Growth, Surfaces and Interfaces

1994
ISBN: 978-0-412-57730-7
Verlag: Springer Netherlands

Buch, Englisch, 158 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 436 g

Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.

Zielgruppe

Research

Autoren/Hrsg.

Williams, R. H.

Davies, G.J.

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Surface reconstruction of GaAs (001) during OMCVD growth. Optical in situ surface control during MOVPE and MBE growth. Lateral quantum size effects created by growth induced surface and interface corrugations on non-(100)-oriented substrates. Fabrication of quantum well wires and vertical quantum wells on submicron gratings by MOVPE. Evolution of surface morphology during epitaxial growth. Reaction models for the epitaxial growth of III-V semiconductors by chemical beam epitaxy. The continuing drama of the semiconductor interface. STM studies of Fermi-level pinning on the GaAs (001) surface. Probing semi-conductor interfaces by transmission electron microscopy. Monitoring growth with X-ray diffraction. Electron states at semiconductor interfaces: the intrinsic and extrinsic charge neutrality levels. Control of electrical barriers at semiconductor heterojunctions by interface doping. In situ characterization and control of compound semiconductor interfaces.