Willander Physical Models of Semiconductor Quantum Devices

Erscheinungsjahr 2013
ISBN: 978-1-4615-5141-6
Verlag: Springer US
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 5, 263 Seiten, eBook

Reihe: Electronic Materials Series

Solid state electronics is undergoing rapid changes driven by heteroepitaxy, lithography, and new device concepts. While ten years ago Si was the material of choice in solid state electronics, now GaAs, InGaAs ,AlAs,InP, Ge,etc. have all become quite important. The advent of semiconductor lasers and integrated optoelectronic circuits has led to a flurry of activities in compound semiconductors. Additionally, the remarkable advances in the thin film epitaxy have allowed active semiconductor devices with sub-three-dimensional properties and built-in controlled biaxial strain due to lattice mismatch. This book addresses three main areas of interest: i) electronic and optical properties oflow dimensional semiconductor materials; ii) principal physics of quantum electronic devices, iii) principal physics of quantum optical devices. These areas will provide readers with an intimate knowledge of the new material properties on which novel solid state electronic devices such as quantum diode, and small size transistor, high electron mobility transistor are based, leading to the very front of the development of material and device research. The link between basic physics on which the real devices are based and the output from the real devices is closely observed in the book. Chapter 1 Elemental and compound semicond uctors 1. 1 Crystalline nat ure of solids The intrinsic property of a crystal is that the environment around a given atom or group of atoms is exactly the same as the environment around another atom or similar group of atoms.

Zielgruppe

Research

Autoren/Hrsg.

Willander, Magnus

Inhaltsverzeichnis

1 Elemental and compound semiconductors.- 1.1 Crystalline nature of solids.- 1.2 Electrons in solids.- 1.3 Electrons in alloys and heterostructures.- 1.4 Envelope function.- 1.5 Crystal growth.- 1.6 Device processing.- 2 Electronic processes in semiconductors.- 2.1 Density of states.- 2.2 Acceleration theorems.- 2.3 Impurities and impurity levels.- 2.4 Fermi level of doped semiconductor.- 2.5 Carrier scatterings.- 2.6 Carrier mobility p-Si1-xGex alloy.- 3 Optical properties of semiconductors.- 3.1 Maxwell equations.- 3.2 Electron in electromagnetic field.- 3.3 Optical absorption.- 3.4 Formation and recombination of electron-hole pair.- 3.5 Radiative recombination.- 3.6 Nonradiative effects.- 4 Electronic quantum devices.- 4.1 Semiclassical and quantum considerations.- 4.2 Resonant tunneling diode.- 4.3 Heterostructure barrier varactor.- 4.4 High electron mobility transistor.- 4.5 Nano-size field-effect transistor.- 4.6 Quantum dot cellular automata.- 5 Quantum optoelectronics.- 5.1 Resonant tunneling light-emitting diode.- 5.2 SiGe heterostructure internal emission infrared photodetector.- 5.3 Quantum well infrared photodetector.- 5.4 Microcavity and four-wave mixing.- 5.5 Photonic gap for electromagnetic wave.- 5.6 Quantum semiconductor laser.- 5.7 Quantum optics.- 6 Numerical recipes.- 6.1 Fermi-Dirac integral.- 6.2 Amplitude of transmitted wave.- 6.3 Localized state.- 6.4 Local density of states: Recursion method.