Modeling, Analysis and Optimization
Buch, Englisch, 460 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 756 g
ISBN: 978-3-030-26174-0
Verlag: Springer International Publishing
- Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;
- Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;
- Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;
- Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Part I. New physics-based EM analysis and system-level dynamic reliability management.- Chapter 1. Introduction.- Chapter 2. Physics Based EM Modeling.- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method.- Chapter 4. Fast EM Immortatlity Analysis For Multisegment Copper Interconnect Wires.- Chapter 5. Dynamic EM Models For Transient Stress Evolution and Recovery.- Chapter 6. Compact EM Models for Multi-SEgment Interconnect Wires.- Chapter 7. EM Assesment for Power Grid Networks.- Chapter 8. Resource Based EM Modeling for Multi-Crore Microprocessors.- Chapter 9. DRM and Optimization for Real Time Embedded Systems.- Chapter 10. Learning Based DRM and Energy Optimization for Many Core Dark Silicaon Processors.- Chapter 11. Recovery Aware DRM for Near Threshold Dark Silicon Processors.- Chapter 12. Cross-Layer DRM and Optimization For Datacenter Systems.- Part II. Transistor Aging Effects and Reliability.- 13. Introduction.- Chapter 14. Aging AWare Timings Analysis.- Chapter 15. Aging Aware Standard Cell Library Optimization Methods.- Chapter 16. Aging Effects In Sequential Elements.- Chapter 17. Aging Guardband Reduction Through Selective Flip Flop Optimization.- Chapter 18. Workload Aware Static Aging Monitoring and Mitigation of Timing Critical Flip Flops.- Chapter 19. Aging Relaxation at Micro Architecture Level Using Special NOPS.- Chapter 20. Extratime Modelling and Analyis of Transistor Agin at Microarchitecture Level.- Chapter 21. Reducing Processor Wearout By Exploiting The Timing Slack of Instructions.