Buch, Englisch, Band 54, 549 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 850 g
Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30-August 3,1990
Buch, Englisch, Band 54, 549 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 850 g
Reihe: Springer Proceedings in Physics
ISBN: 978-3-642-76387-8
Verlag: Springer
This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het erointerfaces - (POLYSE '90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
I Dislocations: Structure.- II Dislocations: Optical and Electronic Properties.- III Beam Induced Characterization.- IV Grain Boundaries: Theory.- V Grain Boundaries in Silicon: Structure, Chemistry and Transport.- VI Gettering and Hydrogen Passivation in Silicon.- VII Polycrystalline Material for Microelectronic Devices.- VIII Silicon Crystallization.- IX Non-silicon Polycrystalline Materials.- X New Solar Cell Materials.- XI Heterointerfaces: Structure.- XII Heterointerfaces: Devices.- Index of Contributors.- Materials Index.
