Nitride Semiconductor Technology

Power Electronics and Optoelectronic Devices
1. Auflage 2020
ISBN: 978-3-527-34710-0
Verlag: WILEY-VCH

Buch, Englisch, 446 Seiten, Format (B × H): 175 mm x 249 mm, Gewicht: 1043 g

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices.
 
In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
 

Autoren/Hrsg.

Roccaforte, Fabrizio

Leszczynski, Michael

Leszczynski, Mike

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik Optische Nachrichtentechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik

Inhaltsverzeichnis

Introduction to Gallium Nitride Properties and Applications
GaN-Based Materials: Substrates, Growth Methods and Quantum Well Properties
State of the Art of GaN-Based HEMTs for Mm-Wave Applications
Technologies for Normally-Off GaN HEMTs
Status and Perspectives of Vertical GaN Power Devices
Gallium Nitride Light Emitting Diodes
Nitride-Based Laser Diodes
Blue and Green Vertical-Cavity Surface-Emitting Lasers
Reliability Issues in GaN HEMTs and LEDs
Integration of GaN with 2D Materials for Novel High Frequency Devices

Über Autor(innen)

Fabrizio Roccaforte is Senior Researcher at Italian National Research Council's (CNR) Institute of Microelectronics and Microsystems (IMM) in Catania, Italy. He received his PhD from University of Göttingen, Germany in 1999 and worked as Scientific Consultant at STMicroelectronics N.V. in Italy before joining IMM. His research interests are in the field of wide band gap semiconductor materials and materials for power electronics devices. Dr. Roccaforte has authored more than 250 research articles, several review articles, five book chapters, and three patents.
 
Michal Leszczynski is a Professor of Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress), Warsaw, Poland. He received his PhD (1990) and Habilitation (1996) in Physics from Institute of Physics - Polish Academy of Science, Warsaw. He then did postdoctoral research at Institute of Theoretical Physics, Trieste, Italy and at Institute of Advanced Materials, Brindisi, Italy. He has served as Visiting Professor at Center of Atomic Energy, Grenoble, France and as Advisor at Philips Analytical, Netherlands. Prof. Leszczynski is a co-founder and now vice-president (R&D) of TopGaN Lasers, a spinoff of Unipress. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction. He has authored more than 350 research articles.