Single-Atom Nanoelectronics

1. Auflage 2013
ISBN: 978-981-4316-31-6
Verlag: Taylor & Francis Ltd (Sales)

Buch, Englisch, 364 Seiten, Format (B × H): 150 mm x 231 mm, Gewicht: 658 g

Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology.

Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Prati, Enrico

Shinada, Takahiro

Fachgebiete

• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

PrefaceIntroduction Asen AsenovQuantum Information in Silicon Devices Based on Individual Dopants Enrico Prati and Andrea MorelloPhysics of Impurities in SiliconTopology of Individual Donors Embedded in Silicon DevicesQuantum Information with Donors in SiliconElectron Spin Qubits with DonorsCoherent Passage of InformationDecoherenceQuantum Nondemolition Measurements of Single-Donor Nuclear and Electron SpinsTheory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard KlimeckTight-Binding Method and NEMO-3DElectronic Structure of a Group V Donor in Bulk SiliconDonor Qubits in SiliconOrbital Stark Effect of Donors in NanostructuresHyperfine Stark EffectUsing Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices Martin Fuechsle and Michelle Y. SimmonsOutline of the Fabrication StrategyAll-Epitaxial Dopant-Based Quantum DotsDownscaling of Dopant-Based DevicesToward Deterministic Single-Atom DevicesToward a Planar Qubit ArchitectureDeterministic Single-Ion Implantation Method for Extending CMOS Technologies Takahiro ShinadaThe Importance of Deterministic DopingSingle-Ion Implantation MethodOrdered Dopant ArraysAsymmetric Ordered Dopant Effects on Transistor PerformancesQuantum Transport in Deterministically Implanted Single DonorsFuture IssuesSingle-Ion Implantation for Quantum Computing David N. JamiesonQuantum ComputationSingle-Ion ImplantationFuture ProspectsFuture PerspectivesSingle Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography Koji Inoue and Yasuyoshi NagaiIntroduction to the Single Atom ImagingAtom Probe TomographyDopant Distribution in a MOSFETDopant Distribution in FinFETsFuture Prospects for APTLow-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature Filippo Guagliardo and Giorgio FerrariFundamentals of Current MeasurementsDesign Rules for Low-Noise Transimpedance AmplifiersWide-Band Transimpedance AmplifiersCryogenic CMOS Amplifiers: Challenges and OpportunitiesGeneral ConsiderationsOrbital Structure and Transport Characteristics of Single Donors Jan Verduijn, Giuseppe C. Tettamanzi, and Sven RoggeLiterature ReviewStructure of the DeviceEigenstates of a Single DonorFuture PerspectivesSingle-Donor Transport Spectroscopy in Ultimate Silicon Transistors Marc Sanquer and Xavier JehlVariability in Ultimate Silicon Transistors CMOS Processes for Single-Atom TransistorsLow-Temperature Spectroscopy and Correlation with 300 K BehaviorAdvantages of the Size Reduction in Single-Atom TransistorsWhat can we Learn from Low-Temperature Transport Spectroscopy in a Single, Shallow Dopant?A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon Thomas Schenkel, Cheuk Chi Lo, Christoph D. Weis, Jeffrey Bokor, Alexei M. Tyryshkin, and Stephen A. LyonGeneral Considerations Coupled Donor–Quantum Dot Spin QubitsCoherence of Donor Spins in 28SiliconElements of Device Fabrication for Donor–Dot Spin QubitsPlacement of Single DonorsSingle-Ion ImplantationSingle Spins in Diamond: Novel Quantum Devices and Atomic Sensors Fedor JelezkoDefects in DiamondOptical Properties of NV DefectsSpin Properties and Spin ReadoutDiamond Quantum RegistersApplications of Single-Color Centers for Novel Imaging TechniquesMagnetometry with Single Diamond SpinsFuture PerspectivesSilicon-Based Single-Dopant Devices and Integration with Photons Michiharu Tabe, Daniel Moraru, and Arief UdhiartoIntroduction—Integration of Single-Dopant Electronics and Single-Photon DetectionSingle-Dopant Transistors in Dopant-Rich Environments—Dopant-Based FunctionalitiesEffects of Photon Illumination on Doped-Nanowire SOI TransistorsFuture DirectionsCircuits with Single-Atom Devices Jan A. Mol and Sven RoggeSingle-Atom Devices for CircuitsHybrid CircuitsFull Addition Using a Single-Atom TransistorIndex

Über Autor(innen)

Enrico Prati received a bachelor’s in theoretical physics in 1998 from the University of Pisa and a PhD in physics in 2002. From 2003 to 2008, he worked at Istituto Nazionale di Fisica della Materia (INFM) and from 2009 he is permanent researcher of Istituto per la Microelettronica e Microsistemi (IMM) of Consiglio Nazionale delle Ricerche (CNR) in Agrate Brianza. In February 2004 he received the Young Scientist Award from the URSI for his work on negative refractive index propagation and metamaterials. From 2011, he has contributed to the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) Committee on deterministic doping. His present research fields are both theoretical and experimental aspects of low-dimensional electron systems, quantum transport, deterministic doping for More than Moore applications, and quantum information in solid state. At present Dr. Prati is secretary of the Associazione Italiana per la Ricerca (www.associazionericerca.it).

Takahiro Shinada received a PhD in engineering in 2000 and an MBA in technology management in 2007 from Waseda University. From 2000 to 2012 he worked at Waseda University, where he was promoted to associate professor in 2006. Since 2012 he has been with the National Institute of Advanced Industrial Science and Technology (AIST), serving as the senior officer for advanced nanodevice research. He is a member of the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) and Emerging Research Materials (ERM) Chapters. His research concerns are deterministic doping in nanoelectronics for extended CMOS applications and its application in biological systems for environment, safety, and health (ESH) issues.