Morris / Iniewski Nanoelectronic Device Applications Handbook

1. Auflage 2017
ISBN: 978-1-4665-6524-1
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 940 Seiten

Reihe: Devices, Circuits, and Systems

Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe.

The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include:

- Nanoscale advances in current MOSFET/CMOS technology

- Nano capacitors for applications such as electronics packaging and humidity sensors

- Single electron transistors and other electron tunneling devices

- Quantum cellular automata and nanomagnetic logic

- Memristors as switching devices and for memory

- Graphene preparation, properties, and devices

- Carbon nanotubes (CNTs), both single CNT and random network

- Other CNT applications such as terahertz, sensors, interconnects, and capacitors

- Nano system architectures for reliability

- Nanowire device fabrication and applications

- Nanowire transistors

- Nanodevices for spintronics

The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries.

This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.

Zielgruppe

Researchers, academics, and graduate students working in nanotechnology in electrical engineering, mechanical engineering, materials science, computer engineering, physics, and chemistry; engineers in the microelectronics industry; entrepreneurs looking to invest in nanoelectronics devices.

Autoren/Hrsg.

Morris, James E.

Iniewski, Krzysztof

Fachgebiete

• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff

Inhaltsverzeichnis

Section I Nano-CMOS Modeling

Validation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.org
Alejandro Rodriguez and Hasina F. Huq

Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device
Nabil Ashraf, Dragica Vasileska, Gilson Wirth, and Purushothaman Srinivasan

Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET Devices
Yiming Li

Section II Nano-CMOS Technology

Bottom-Up Approaches for CMOS Scaling in the Nanoscale Era
Mrunal A. Khaderbad and V. Ramgopal Rao

Study of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device
A. Srivastava and Y. Malhotra

Low-Power Reliable Nano Adders
Azam Beg, Mawahib Hussein Sulieman, Valeriu Beiu, and Walid Ibrahim

Section III Nano Capacitors

Package-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-Dielectrics
Himani Sharma, P. Markondeya Raj, Parthasarathi Chakraborti, Yushu Wang, and Rao Tummala

Modified Carbon Nanostructures for Display and Energy Storage
Sivaram Arepalli

Production and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic Electronics
Muhammad Hassan Sayyad, Fazal Wahab, Munawar Ali Munawar, Muhammad Shahid, Jamil Anwar Chaudry, Khaulah Sulaiman, Zubair Ahmad, and Abdullah Mohamed Asiri

Investigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS Reliability
Gang Li, Ulrik Hanke, and Xuyuan Chen

Section IV Terahertz Systems and Devices

Nano Antennas for Energy Conversion
Mario Bareiß, Andreas Hochmeister, Gunther Jegert, Gregor Koblmüller, Ute Zschieschang, Hagen Klauk, Bernhard Fabel, Giuseppe Scarpa, Wolfgang Porod, and Paolo Lugli

Ballistic Transistor Logic for Circuit Applications
David Wolpert and Paul Ampadu

Section V Single Electron Transistors and Electron Tunneling Devices

Simultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration
Mitsuki Ito, Shunsuke Akimoto, Ryutaro Suda, and Jun-Ichi Shirakashi

High-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles
P. Santosh Kumar Karre, Daw Don Cheam, Manoranjan Acharya, and Paul L. Bergstrom

Axon-Inspired Communication Systems
Valeriu Beiu, Liren Zhang, Azam Beg, Walid Ibrahim, and Mihai Tache

Electromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic Devices
Alessandro Giuseppe D’Aloia, Alessio Tamburrano, Giovanni De Bellis, Jacopo Tirillò, Fabrizio Sarasini, and Maria Sabrina Sarto

Section VI Quantum Cellular Automata

An HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and Circuits
Marco Ottavi, Salvatore Pontarelli, Adelio Salsano, and Fabrizio Lombardi

Restoring Divider Design for Quantum-Dot Cellular Automata
Seong-Wan Kim and Earl E. Swartzlander, Jr.

LINA-QCA: Theory, Design, and Viable Implementation Strategies
Loyd R. Hook IV and Samuel C. Lee

Minimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular Automata
Peng Wang, Mohammed Niamat, and Srinivasa Vemuru

Section VII Memristors, Resistive Switches, and Memory

Nanodevices: Describing Function and Liénard Equation
Alberto Delgado

Sensing and Writing Operations of Nano-Crossbar Memory Arrays
An Chen

Modeling of Complementary Resistive Switches
E. Linn, S. Menzel, R. Rosezin, U. Böttger, R. Bruchhaus, and R. Waser

Hybrid Design of a Memory Cell Using a Memristor and Ambipolar Transistors
Pilin Junsangsri and Fabrizio Lombardi

Spike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT Memories
Kurtis D. Cantley, Anand Subramaniam, and Eric M. Vogel

Thermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft Application
Elham Maghsoudi and Michael James Martin

Section VIII Graphene Preparation and Properties

Low-Stress Transfer of Graphene and Its Tunable Resistance by Remote Plasma Treatments in Hydrogen
Waileong Chen, Chia-Hao Tu, Keng-Chih Liang, Chih-Yi Liu, Chuan-Pu Liu, and Yonhua Tzeng

High-Yield Dielectrophoretic Deposition and Ion Sensitivity of Graphene
Pengfei Li, Nan Lei, Jie Xu, and Wei Xue

Multilayer Graphene Grid and Nanowire Fabrication and Printing
Masudur Rahman and Michael L. Norton

Section IX Graphene Devices

Nanotransistors Using Graphene Interfaced with Advanced Dielectrics for High-Speed Communication
Osama M. Nayfeh, Ki Kang Kim, and Jing Kong

Graphene-on-Diamond Devices and Interconnects: Carbon sp2-on-sp3 Technology
Jie Yu, Guanxiong Liu, Alexander A. Balandin, and Anirudha V. Sumant

Graphene Band Gap Modification via Functionalization with Metal-Bis-Arene Molecules
Paul Plachinda, David R. Evans, and Raj Solanki

Section X Carbon Nanotube Applications

Integrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si Technology
Sten Vollebregt, Ryoichi Ishihara, Jaber Derakhshandeh, Johan van der Cingel, Hugo Schellevis, and C.I.M. Beenakker

Readout Circuit Design for MWCNT Infrared Sensors
Liangliang Chen, Ning Xi, Hongzhi Chen, and King Wai Chiu Lai

Use of Vertically Aligned Carbon Nanotubes for Electrochemical Double-Layer Capacitors
Adrianus I. Aria, Mélanie Guittet, and Morteza Gharib

Spray Deposition of Carbon Nanotube Thin Films
Alaa Abdellah, Paolo Lugli, and Giuseppe Scarpa

Electrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon Microstructure
Knut E. Aasmundtveit, Bao Quoc Ta, Nils Hoivik, and Einar Halvorsen

Section XI Carbon Nanotube Transistor Modeling

A Qualitative Comparison of Energy Band Gap Equations with a Focus on Temperature and Its Effect on CNTFETs
Jesus Torres and Hasina F. Huq

Real-Time Quantum Simulation of Terahertz Response in Single-Walled Carbon Nanotube
Zuojing Chen, Eric Polizzi, and Sigfrid Yngvesson

Section XII Carbon Nanotube Transistor Fabrication

Fabrication of Stable n-Type Thin-Film Transistor with Cs Encapsulated Single-Walled Carbon Nanotubes
Toshiaki Kato, Rikizo Hatakeyama, and Yosuke Osanai

Printing Technology and Advantage of Purified Semiconducting Carbon Nanotubes for Thin Film Transistors
Hideaki Numata, Kazuki Ihara, Takeshi Saito, and Fumiyuki Nihey

Section XIII Random CNT Network Transistors

Solution-Processed Random Carbon Nanotube Networks Used in a Thin-Film Transistor
Qingqing Gong, Edgar Albert, Bernhard Fabel, Alaa Abdellah, Paolo Lugli, Giuseppe Scarpa, and Mary B. Chan-Park

Analysis of Yield Improvement Techniques for CNFET-Based Logic Gates
Rehman Ashraf, Malgorzata Chrzanowska-Jeske, and Siva G. Narendra

Low-Power and Metallic-CNT-Tolerant CNTFET SRAM Design
Zhe Zhang and José G. Delgado-Frias

Section XIV Nano-Redundant Systems

Optimized Built-In Self-Test Technique for CAEN-Based Nanofabric Systems
Maciej Zawodniok and Sambhav Kundaikar

Adaptive Fault-Tolerant Architecture for Unreliable Device Technologies
Nivard Aymerich, Sorin Cotofana, and Antonio Rubio

Section XV Nanowire Fabrication

Growth and Characterization of GaAs Nanowires Grown on Si Substrates
Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan, Hannah J. Joyce, Yong Kim, Yanan Guo, Hongyi Xu, Jin Zou, Melodie A. Fickenscher, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, and Chennupati Jagadish

Synthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing Applications
Hoang A. Tran and Shankar B. Rananavare

Cu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion Batteries
Poh Keong Ng, Reza Shahbazian-Yassar, and Carmen Maria Lilley

High-Aspect-Ratio Metallic Nanowires by Pulsed Electrodeposition
Matthias Graf, Alexander Eychmüller, and Klaus-Jürgen Wolter

Section XVI Nanowire Applications

Zinc Oxide Nanowires for Biosensing Applications
Anurag Gupta, Bruce C. Kim, Dawen Li, Eugene Edwards, Christina Brantley, and Paul Ruffin

Aqueous Synthesis of n-/p-type ZnO Nanorods on Porous Silicon for the Application of p–n Junction Device
Eunkyung Park, Jungwoo Lee, Taehee Park, Jongtaek Lee, Donghwan Lee, and Whikun Yi

High Surface-Enhanced Raman Scattering (SERS) as an Analytical Tool Using Silver Nanoparticles on GaN Nanowires
Nitzan Dar, Wen-Jing Wang, Kuo-Hao Lee, Yung-Tang Nien, and In-Gann Chen

Section XVII Nanowire Transistors

High-Speed and Transparent Nanocrystalline ZnO Thin Film Transistors
Burhan Bayraktaroglu and Kevin Leedy

First-Principle Study of Energy-Band Control by Cross-Sectional Morphology in [110]-Si Nanowires
Shinya Kyogoku, Jun-Ichi Iwata, and Atsushi Oshiyama

Interplay of Self-Heating and Short-Range Coulomb Interactions Due to Traps in a 10 nm Channel Length Nanowire Transistor
Arif Hossain, Dragica Vasileska, Katerina Raleva, and Stephen M. Goodnick

Impact of Phonon Scattering in an Si GAA Nanowire FET with a Single Donor in the Channel
Antonio Martinez, Manuel Aldegunde, and Karol Kalna

Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs
Po-Chun Huang, Lu-An Chen, C.C. Chen, and Jeng-Tzong Sheu

Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor: Extraction of Series Resistance and Capacitance–Voltage Behavior
Yoon-Ha Jeong, Sang-Hyun Lee, Ye-Ram Kim, Rock-Hyun Baek, Dong-Won Kim, Jeong-Soo Lee, and Dae Mann Kim

Section XVIII Nanomagnetic Logic

Nonvolatile Logic-in-Memory Architecture: An Integration between Nanomagnetic Logic and Magnetoresistive RAM
Jayita Das, Syed M. Alam, and Sanjukta Bhanja

Implementation of a Nanomagnet Full Adder Circuit
Edit Varga, György Csaba, G. H. Bernstein, and Wolfgang Porod

Investigations on Nanomagnetic Logic by Experiment-Based Compact Modeling
Stephan Breitkreutz, Josef Kiermaier, Irina Eichwald, Xueming Ju, György Csaba, Doris Schmitt-Landsiedel, and Markus Becherer

Parallel Energy Minimizing Computation via Dipolar Coupled Single Domain Nanomagnets
Javier Pulecio, Sanjukta Bhanja, and Sudeep Sarkar

Section XIX Spintronics

On Physical Limits and Challenges of Graphene Nanoribbons as Interconnects for All-Spin Logic
Shaloo Rakheja and Azad Naeemi

Influence of Impurity and Dangling Bond Scattering on the Conductance Anomalies of Side-Gated Quantum Point Contacts
J. Wan, J. Charles, M. Cahay, P.P. Das, N. Bhandari, and R.S. Newrock

Electric Field-Controlled Spin Interactions in Quantum Dot Molecules
Kushal C. Wijesundara and Eric A. Stinaff

Material Issues for Efficient Spin-Transfer Torque RAMs
Kamaram Munira, William A. Soffa, and Avik W. Ghosh

Section XX Nanodevice Modeling

Atomic-Scale Modeling of Nanoscale Devices
Anders Blom and Kurt Stokbro

Index

Über Autor(innen)

James (Jim) E. Morris is an electrical and computer engineering professor at Portland State University, Oregon, and professor emeritus at SUNY-Binghamton, having served as department chair at both. Dr. Morris has served the IEEE Components Packaging and Manufacturing Technology (CPMT) Society as a treasurer (1991–1997), BoG member (1996–1998, 2011–2013), VP for conferences (1998–2003), distinguished lecturer (2000–present), CPMT Transactions associate editor (1998–present), and co-chair of the CPMT Technical Committee on nanotechnology, and was recognized with the 2005 CPMT David Feldman Outstanding Contribution Award. He serves on the IEEE Nanotechnology Council (NTC) as CPMT representative (2007–present), VP for conferences (2013–2014), and past Awards chair. He has edited or co-authored five books on electronics packaging, including one on nanopackaging.

Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., a startup company in Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research Inc., an organization of high-tech events covering communications, microsystems, optoelectronics, and sensors. Dr. Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, Simon Fraser University, and PMC-Sierra, Inc. He has published more than 100 research papers in international journals and conferences. He holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. He is a frequent invited speaker, has consulted for multiple organizations internationally, and has written and edited several books.