Special topic volume with invited papers only
Buch, Englisch, 288 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 700 g
ISBN: 978-0-87849-358-6
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters BCI (WoS).This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface
Visible Light-Emitting Diodes - The Formative Years
Perspective on the Development of III-Nitrides for Optical Emitters
Silicon Part
Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
Dislocation Networks Formed by Silicon Wafer Direct Bonding
Si- and SiGe-Based LEDs
SOI-LEDs with Carrier Confinement
MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
Compound Part
Present Status of Deep UV Nitride Light Emitters
AlN and AlGaN by MOVPE for UV Light Emitting Devices
Nonpolar and Semipolar Orientations: Material Growth and Properties
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells
