Reliability Physics and Engineering

Time-To-Failure Modeling
Third Auflage 2019
ISBN: 978-3-319-93682-6
Verlag: Springer International Publishing

Buch, Englisch, 463 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 887 g

This third edition textbook provides the basics of reliability physics and engineering that are needed by electrical engineers, mechanical engineers, civil engineers, biomedical engineers, materials scientists, and applied physicists to help them to build better devices/products. The information contained within should help all fields of engineering to develop better methodologies for: more reliable product designs, more reliable materials selections, and more reliable manufacturing processes— all of which should help to improve product reliability. A mathematics level through differential equations is needed. Also, a familiarity with the use of excel spreadsheets is assumed. Any needed statistical training and tools are contained within the text. While device failure is a statistical process (thus making statistics important), the emphasis of this book is clearly on the physics of failure and developing the reliability engineering tools required for product improvements during device-design and device-fabrication phases.

Zielgruppe

Graduate

Autoren/Hrsg.

McPherson, J. W.

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technische Zuverlässigkeit, Sicherheitstechnik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Zuverlässigkeitstechnik

Inhaltsverzeichnis

Introduction.- Physics of Degradation.- Time Dependence of Materials and Device Degradation.- From Material/Device Degradation to Time-To-Failure.- Time-To-Failure Modeling.- Gaussian Statistics - An Overview.- Time-To-Failure Statistics.- Failure Rate Modeling.- Accelerated Degradation.- Acceleration Factor Modeling.- Ramp-To-Failure Testing.- Time-To-Failure Models for Selected Failure Mechanisms in Integrated Circuits.- Time-To-Failure Models for Selected Failure Mechanisms in Mechanical Engineering.- Conversion of Dynamical Stresses Into Effective Static Values.- Resonance and Resonance-Induced Degradation.- Increasing the Reliability of Device/Product Designs.- Screening.- Heat Generation and Dissipation.- Sampling Plans and Confidence Intervals.-

Über Autor(innen)

J.W. McPherson is recognized internationally as an expert in Reliability Physics & Engineering. He has published over 200 papers on reliability, authored the Reliability Chapters for 4 Books, awarded 15 patents, and holds the title of Texas Instruments Senior Fellow Emeritus. He was the 1995 General Chairman of the IEEE International Reliability Physics Symposium and still serves on its Board of Directors. In 2004, Joe received the IEEE Engineer of the Year Award from the Texas Society of Professional Engineers. In 2006, he was the Chairman of the International Sematech Reliability Council. Joe is an IEEE Fellow and the Founder/CEO of McPherson Reliability Consulting, LLC. His semiconductor reliability expertise includes device-physics, design-in reliability, wafer-fabrication and assembly-related reliability issues. Several of the reliability models that are used today in the semiconductor industry are closely associated with his name.