Stress and Strain Engineering at Nanoscale in Semiconductor Devices

1. Auflage 2021
ISBN: 978-0-367-51929-2
Verlag: CRC Press

Buch, Englisch, 274 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 581 g

Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale.

Features

- Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices

- Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations

- Explains the development of strain/stress relationships and their effects on the band structures of strained substrates

- Uses design of experiments to find the optimum process conditions

- Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions

This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Autoren/Hrsg.

Maiti, Chinmay K.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Naturwissenschaften Physik Physik Allgemein

Inhaltsverzeichnis

Chapter 1. Introduction

Chapter 2. Simulation Environment

Chapter 3. Stress Generation Techniques in CMOS Technology

Chapter 4. Electronic Properties of Engineered Substrates

Chapter 5. Bulk-Si FinFETs

Chapter 6. Strain-Engineered FinFETs at NanoScale

Chapter 7. Technology CAD of III-Nitride Based Devices

Chapter 8. Strain-Engineered SiGe Channel TFT for Flexible Electronics

Über Autor(innen)

Professor Chinmay K. Maiti, PhD is an Ex-Professor and Ex-Head of Department from Indian Institute of Technology (IIT) – Kharagpur, India. He then joined the SOA University, Bhubaneswar in May 2015 as a Professor, where he is now on a Visiting Assignment. He is interested in strain-engineering in nanodevices, flexible electronics, and semiconductor device/process simulation research, and microelectronics education. He has published several monographs in Silicon-Germanium, heterostructure-Silicon, and Technology CAD areas. He has edited the "Selected Works of Professor Herbert Kroemer", World Scientific, Singapore, 2008.