Nanometer CMOS

1. Auflage 2010
ISBN: 978-981-4241-08-3
Verlag: Jenny Stanford Publishing

Buch, Englisch, 350 Seiten, Format (B × H): 159 mm x 239 mm, Gewicht: 631 g

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Liou, Juin J

Schwierz, Frank

Wong, Hei

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

The Evolution of Silicon Electronics. MOSFET Theory. Nanoscale MOSFETs. MOSFETs for RF Applications. Overview of Nanometer CMOS Technology. Outlook. Appendices.

Über Autor(innen)

Juin J Liou, Frank Schwierz, Hei Wong