Insulated Gate Bipolar Transistor Igbt Theory and Design

1. Auflage 2003
ISBN: 978-0-471-23845-4
Verlag: Wiley

Buch, Englisch, 648 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 1129 g

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. - All-in-one resource
- Explains the fundamentals of MOS and bipolar physics.
- Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Autoren/Hrsg.

Khanna, Vinod Kumar

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface.
Power Device Evolution and the Advert of IGBT.

IGBT Fundamentals and Status Review.

MOS Components of IGBT.

Bipolar Components of IGBT.

Physics and Modeling of IGBT.

Latch-Up of Parasitic Thyristor in IGBT.

Design Considerations of IGBT Unit Cell.

IGBT Process Design and Fabrication Technology.

Power IGBT Modules.

Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.

IGBT Circuit Applications.

Index.

Über Autor(innen)

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.