High Permittivity Gate Dielectric Materials

2013
ISBN: 978-3-642-36534-8
Verlag: Springer

Buch, Englisch, Band 43, 489 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 9044 g

Reihe: Springer Series in Advanced Microelectronics

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

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Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Kar, Samares

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie

Inhaltsverzeichnis

Historical Perspectives.- High Mobility Channels.- Non-Volatile Memory.- Hafnium-Based Gate Dielectric Materials.- Lanthanum-Based High-K Gate Dielectric Materials.- Crystalline High-K Gate Dielectric Materials.- High-K Gate Dielectric Processing.- Metal Gate Electrodes.- Flat-Band/Threshold Voltage Control.- Interfaces and Defects.- Electrical Characterization and Parameter Extraction.- Non-Contact Metrology of High-K Gate Dielectrics.- Channel Mobility.- High-K Gate Dielectric Reliability Issues.- Bias Temperature Instability.- Integration Issues.

Über Autor(innen)

Samares Kar was born in Kolkata, India in 1942. He received the B.Tech. degree in electrical engineering in 1962 from the Indian Institute of Technology in Kharagpur, India, and the M.S. and Ph.D. degrees in electrical engineering from Lehigh University in Bethlehem, Pennsylvania, USA in 1968 and 1970, respectively.

During the period 1963-1965, he worked in West Germany, first as a design engineer with the Hamburger Transformatorenbau in Hamburg, and then as a project engineer with the Continental Elektroindustrie in Rheydt. During the period 1971-1974, he was a member of the scientific staff at the Fraunhofer Institute of Applied Solid State Physics in Freiburg, West Germany. In 1975, he joined the Indian Institute of Technology in Kanpur, where he was a professor of electrical engineering and materials science from 1980 till 2004, an emeritus fellow between 2004 and 2006, and currently is an R & D consultant. In 1979, he was at The Pennsylvania State University, University Park, Pennsylvania as a visiting associate professor of engineering science, and in 1981, he was at Lehigh University, Bethlehem as a visiting professor of electrical engineering. His research interests have included MOS tunnel devices, Si-SiO2 interface states, solar cells, ion-beam induced defects, organic monolayers, high-K gate dielectrics, and MOS/MIS parameter extraction. His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states.

Dr. Kar was/is the lead organizer of The First, Second, Third, Fourth, and Fifth International Symposium on High Dielectric Constant Materials held respectively in October 2002 in Salt Lake City, UT, in October 2003 in Orlando, FL, in October 2005 in Los Angeles, CA., in October 2006 in Cancun, Mexico, and in October 2007 in Washington, DC. He is the lead editor of the four volumes of the book entitled "Physics and Technology of High-K Gate Dielectrics".