Microprobe Characterization of Optoelectronic Materials

1. Auflage 2002
ISBN: 978-1-56032-941-1
Verlag: CRC Press

Buch, Englisch, 730 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 1065 g

Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Jimenez, Juan

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lichtwellenleiter
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Elektromagnetismus Magnetismus
• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik

Inhaltsverzeichnis

1. Photoluminescence Imaging
2. MicroRaman Spectroscopy of Semiconductors: Principles and Applications
3. Near-Field Scanning Optical Microscopy of Semiconductor Nanostructures
4. Cross-sectional Scanning Tunneling Microscopy Studies of Heterostructures
5. Application of Transmission Electron Microscopy to Study Interfaces in Optoelectronic Materials
6. Electron Beam Induced Luminescence Studies of Low-dimensional Semiconductor Structures
7. X-ray Topography
8. Selective Etching and Complementary Microprobe Techniques (SFM, EBIC)

Über Autor(innen)

Juan Jiménez is a Professor at the University of Valladolid, Spain, working in the field of microscopic characterization of semiconductors, using electron (Cathodoluminescence) and optical (photoluminescence, Raman scattering and photocurrent) beams. He has studied the local properties and uniformity of GaAs, SiC, InP and other semiconductors. He received his degree in Physics from the University of Valladolid in 1975 and his PhD from Valladolid in 1979. He undertook postdoctoral work at the University of Montpellier, France from 1978-1981 and received a PhD from Montpellier University in 1981.