He / Yang / Ni Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

1. Auflage 2016
ISBN: 978-3-662-52718-4
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 698 Seiten, eBook

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

Li He received his B.S. degree from Nanjing University of Posts and Telecommunications in 1982, his M.S. in Electrical Engineering from the University of Electro and Communications (Japan) in 1985, and his Ph.D. in Electrical Engineering from Hokkaido University (Japan) in 1988. He was a Humboldt researcher at the Institute of Physics, Wuerzburg University (Germany) from 1990 to 1992 and subsequently worked at Purdue University, USA, from 1992 to 1994. Then he served as an associate professor at Hokkaido University, focusing on the interface electron quantum in 1994. Since 1994, he has been working at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He is currently a full professor at Shanghai Institute of Technical Physics, and the director of its Academic Committee. He is also the director of the Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences. His research chiefly focuses on infrared electro-optical materials and devices. Dingjiang Yang received his degree in Semiconductor Physics from the University of Jilin(China) in 1984. From 1984 to 2009, he was a faculty member at the North China Research Institute Of Electro-Optics (NCRIEO). After leaving the NCRIEO, he was the chairman of the China Optics and Optoelectronics Manufacturers Association (COEMA) from 2009 to 2015. Since December 2015 he has been the Chairman of Tianjin Lishen Battery Joint-Stock Co. Ltd. His research mainly focuses on InSb and HgCdTe detectors. Guoqiang Ni is a professor at Beijing Institute of Technology (BIT), Beijing, China. He graduated from Fudan Univ., Shanghai, China and received his bachelor's degree in Nuclear Physics in 1967. Later, he completed his Master's and Ph.D. in Optical Engineering at BIT, in 1983 and 1989. Since January 1983 he has been a faculty member of BIT's Opto-electronics School. His research focuses on Optical Engineering, Photo-electronics Devices/Technologies/Systems, Image Processing, etc.

Zielgruppe

Research

Autoren/Hrsg.

He, Li

Yang, Dingjiang

Ni, Guoqiang

Inhaltsverzeichnis

1;Preface;5
2;Contents;7
3;1 Fundamentals of Focal Plane Arrays;11
3.1;1.1 History and Trends of Infrared Imaging Detectors;11
3.2;1.2 Introduction to Advanced FPAs of HgCdTe and AlGaN;15
3.2.1;1.2.1 Outline;15
3.2.2;1.2.2 Improving DRI Range by High Spatial and Temperature Resolutions;17
3.2.2.1;1.2.2.1 Johnson’s Criteria;17
3.2.2.2;1.2.2.2 Approach for Large-Scale (High Spatial Resolution) HgCdTe FPAs;18
3.2.2.3;1.2.2.3 Approach for High Sensitivity (Temperature Resolution) HgCdTe FPAs;19
3.2.3;1.2.3 Improving DRI Range by Multiband Imaging;23
3.2.4;1.2.4 Improving Compactness and Intelligence by Integrated Processing Chip;26
3.3;1.3 Summary;26
3.4;References;26
4;2 Design Methods for HgCdTe Infrared Detectors;27
4.1;2.1 Introduction;27
4.2;2.2 Simulation and Design of HgCdTe Infrared Detectors;28
4.2.1;2.2.1 Foundation for HgCdTe Infrared Detector Designs;28
4.2.1.1;2.2.1.1 Model of Carrier Density Approximation;29
4.2.1.2;2.2.1.2 Heterostructure Models;36
4.2.2;2.2.2 Design of Heterojunctions HgCdTe Infrared Detectors;41
4.2.2.1;2.2.2.1 The Calculation of Band Structure in Heterojunction Devices;41
4.2.2.2;2.2.2.2 The Influence of Potential Barrier on the Device Performance;45
4.2.3;2.2.3 Design of Long Wavelength HgCdTe Detectors;52
4.2.3.1;2.2.3.1 R0A and Photocurrent;55
4.2.3.2;2.2.3.2 Spectral Response;63
4.2.3.3;2.2.3.3 Thickness of Absorption Layer and Interface Charge Density;67
4.2.4;2.2.4 Design of Two-Color HgCdTe Detector;74
4.2.4.1;2.2.4.1 Typical Two-Color HgCdTe Detectors;75
4.2.4.2;2.2.4.2 Numerical Simulation of Spectral Photoresponse;80
4.2.4.3;2.2.4.3 The Relationship of Spectral Response with Minority Carrier Lifetimes;85
4.2.4.4;2.2.4.4 The Relationship of Cross Talk with the Barrier Layer;87
4.2.4.5;2.2.4.5 The Optimum Thickness of the Absorption Layers;90
4.3;2.3 Methods of Extracting Parameters from HgCdTe Materials and Chips;93
4.3.1;2.3.1 Extracting Device Parameters by Electrical Method;93
4.3.1.1;2.3.1.1 Extract Device Parameters for Long Wavelength HgCdTe Photodiodes;93
4.3.1.2;2.3.1.2 Temperature Dependence for Long Wavelength HgCdTe Photodiodes;101
4.3.1.3;2.3.1.3 Statistical Analysis of Long Wave HgCdTe Photodiodes;106
4.3.1.4;2.3.1.4 Statistical Analysis of Mid-Wavelength HgCdTe Photodiodes;109
4.3.2;2.3.2 Extracting Device Parameters by Photoelectric Method;109
4.3.2.1;2.3.2.1 Photon-Generated Minority Carrier Lifetime;109
4.3.2.2;2.3.2.2 Laser Beam-Induced Current Microscopy for HgCdTe Photodiodes;114
4.4;2.4 Summary;124
4.5;References;125
5;3 CdTe/Si Composite Substrate and HgCdTe Epitaxy;131
5.1;3.1 Introduction;131
5.2;3.2 Basic Models on Si-Based HgCdTe Epitaxy;132
5.2.1;3.2.1 Physical Model of Selective Growth on Si Surface (Mechanism of as Passivation on Surface);133
5.2.2;3.2.2 Atomic Distribution Model of Si Substrate ZnTe/CdTe;143
5.2.3;3.2.3 Arsenic Impurity in MCT;150
5.2.4;3.2.4 Amphoteric Doping Behavior of as in MCT;164
5.3;3.3 HgCdTe Growth on Si by MBE;183
5.3.1;3.3.1 ZnTe/CdTe Grading Buffer on Si by MBE;183
5.3.2;3.3.2 HgCdTe Growth on Large-size Alternative Substrates;199
5.3.3;3.3.3 Extrinsic Doping in HgCdTe by MBE;207
5.4;3.4 Si-Based HgCdTe LPE Technology;229
5.4.1;3.4.1 The Surface Treatment of CdTe/Si Composite Substrate;231
5.4.2;3.4.2 LPE Process Optimization;234
5.4.3;3.4.3 Basic Properties of HgCdTe LPE Materials;237
5.4.4;3.4.4 Remaining Issues and Analysis;246
5.5;3.5 Thermal Stress of Si-Based HgCdTe Materials;249
5.5.1;3.5.1 Spectral Characteristics of Si-Based HgCdTe Materials;250
5.5.2;3.5.2 Theoretical Analysis of Stress of Multilayer Structure Materials;255
5.6;3.6 Summary;264
5.7;References;265
6;4 AlGaN Epitaxial Technology;274
6.1;4.1 Introduction;274
6.2;4.2 Basic Properties of GaN-Based Material and Preparation Techniques;275
6.2.1;4.2.1 The Basic Properties of GaN-Based Material and Its Use in Ultraviolet Detectors;275
6.2.2;4.2.2 MOCVD Epitaxial Deposition System and In Situ Monitoring Method;277
6.3;4.3 MOCVD Epitaxial Growth Technique of AlGaN Material;288
6.3.1;4.3.1 AlGaN Epitaxial Technology on GaN Buffer Layer;289
6.3.2;4.3.2 AlN Buffer Layer and AlGaN Epitaxial Technique;308
6.3.3;4.3.3 The P-Type Doping Technique of GaN Material;327
6.4;4.4 Overall Performance Analysis of AlGaN Material;332
6.4.1;4.4.1 Effects on Optical and Electrical Properties of GaN Material from Dislocations;332
6.4.2;4.4.2 Measurement of Al Components in AlGaN and Determination of Its Strain State;337
6.4.3;4.4.3 Uniformity of AlGaN with High Al Component;343
6.4.4;4.4.4 Oxidation of AlGaN Materials;346
6.5;4.5 Summary;351
6.6;References;352
7;5 HgCdTe Detector Chip Technology;360
7.1;5.1 Introduction;360
7.2;5.2 HgCdTe Detector Chip Processing Technologies;363
7.2.1;5.2.1 Isolation Technology of HgCdTe Micro-Mesa Array;363
7.2.2;5.2.2 Micro-Mesa Photolithography;424
7.2.3;5.2.3 High-Quality Sidewall Passivation Technique of Micro-Mesa Arrays;427
7.2.4;5.2.4 Metallization of Micro-Mesa Array;435
7.2.5;5.2.5 Indium Bump Preparation and Hybridized Interconnection of Micro-Mesa Array;443
7.3;5.3 Two-Color Micro-Mesa Detector Chip;449
7.3.1;5.3.1 Selection of Two-Color Detector Chip Architecture;449
7.3.2;5.3.2 Fabrication of Two-Color HgCdTe Micro-Mesa Preliminary Detector;453
7.3.3;5.3.3 Simultaneous 128 × 128 Two-Color HgCdTe IRFPAs Detector;456
7.4;5.4 Si-Based HgCdTe Processing Technology;458
7.4.1;5.4.1 Stress Analysis and Structure Design of Si-Based HgCdTe;459
7.4.2;5.4.2 Low Damage Stress Chip Processing Technology of 3-Inch Si-Based HgCdTe Wafer;470
7.5;5.5 Summary;480
7.6;References;482
8;6 Chip Technique of AlGaN Focal Plane Arrays;486
8.1;6.1 Introduction;486
8.2;6.2 AlGaN P–I–N Solar-Blind UV Detectors-Model and Design;487
8.2.1;6.2.1 Material Parameters of AlGaN Thin Films;488
8.2.2;6.2.2 Response Model and Design of AlGaN P–I–N Detector;488
8.3;6.3 AlGaN Resonant-Cavity-Enhanced UV Detectors;496
8.3.1;6.3.1 The Basic Structure of Resonant-Cavity-Enhanced UV Detectors;498
8.3.2;6.3.2 Design and Fabrication of RCE Ultraviolet Detectors;500
8.4;6.4 AlGaN Detector Chip Fabrication;507
8.4.1;6.4.1 Mesa Formation Technology;509
8.4.2;6.4.2 Passivation of the Chip;532
8.4.3;6.4.3 Ohmic Contact;533
8.5;6.5 Irradiation Effects of AlGaN Ultraviolet Detectors;570
8.5.1;6.5.1 Proton Irradiation Effects;571
8.5.2;6.5.2 Electron Irradiation Effects;573
8.5.3;6.5.3 ? Irradiation Effects;579
8.5.4;6.5.4 Irradiation Hardening Study of the GaN-Based UV Detectors;582
8.6;6.6 Imaging and Application of UV Focal Plane Assembly;591
8.6.1;6.6.1 Imaging of Quartz Tube Heated by Oxyhydrogen Flame;591
8.6.2;6.6.2 Imaging in Visible-Blind Waveband;592
8.6.3;6.6.3 Imaging of Outside Scene;593
8.6.4;6.6.4 Aerial UV Photographs of Oil on Sea Surface;593
8.7;6.7 Summary;594
8.8;References;596
9;7 Readout Integrated Circuit, Measurement, and Testing Technology for Advanced Focal Plane Array;603
9.1;7.1 Introduction;603
9.2;7.2 Introduction and Development for Readout Integrated Circuit;604
9.3;7.3 Dual-Band Readout Integrate Circuit;606
9.3.1;7.3.1 Conventional Topologies of a Dual-Band ROIC;608
9.3.2;7.3.2 The Proposed Topology for a Simultaneous Dual-Band ROIC;620
9.3.3;7.3.3 The Implementation of a Dual-Band Infrared ROIC and an Ultraviolet ROIC;624
9.4;7.4 Digital Transmission System on Chip for IRFPA;640
9.4.1;7.4.1 The Architecture of the Digital System for IRFPA;641
9.4.2;7.4.2 Algorithms for the Implementation of ADC on the Focal Plane;646
9.4.3;7.4.3 Implementations for the ADC on Focal Plane;660
9.5;7.5 Measurement and Testing Technology for Focal Plane Array;686
9.5.1;7.5.1 Measurement of Parameters for Infrared FPA;687
9.5.2;7.5.2 Measurement of Parameters for Ultraviolet FPA;693
9.6;7.6 Summary;695
9.7;References;696

Fundamentals of focal plane arrays.- Design Methods for HgCdTe infrared Detectors.- CdTe/Si composite substrate and HgCdTe epitaxy.- AlGaN Epitaxial Technology.- HgCdTe Detector Chip Technology.- Chip Technique of AlGaN Focal Plane Arrays.- Readout Integrated Circuit, Measurement and Testing Technology for Advanced Focal Plane Array.

Über Autor(innen)

Li He received his B.S. degree from Nanjing University of Posts and Telecommunications in 1982, his M.S. in Electrical Engineering from the University of Electro and Communications (Japan) in 1985, and his Ph.D. in Electrical Engineering from Hokkaido University (Japan) in 1988. He was a Humboldt researcher at the Institute of Physics, Wuerzburg University (Germany) from 1990 to 1992 and subsequently worked at Purdue University, USA, from 1992 to 1994. Then he served as an associate professor at Hokkaido University, focusing on the interface electron quantum in 1994. Since 1994, he has been working at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He is currently a full professor at Shanghai Institute of Technical Physics, and the director of its Academic Committee. He is also the director of the Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences. His research chiefly focuses on infrared electro-optical materials and devices.Dingjiang Yang received his degree in Semiconductor Physics from the University of Jilin(China) in 1984. From 1984 to 2009, he was a faculty member at the North China Research Institute Of Electro-Optics (NCRIEO). After leaving the NCRIEO, he was the chairman of the China Optics and Optoelectronics Manufacturers Association (COEMA) from 2009 to 2015. Since December 2015 he has been the Chairman of Tianjin Lishen Battery Joint-Stock Co. Ltd. His research mainly focuses on InSb and HgCdTe detectors. Guoqiang Ni is a professor at Beijing Institute of Technology (BIT), Beijing, China. He graduated from Fudan Univ., Shanghai, China and received his bachelor’s degree in Nuclear Physics in 1967. Later, he completed his Master’s and Ph.D. in Optical Engineering at BIT, in 1983 and 1989. Since January 1983 he has been a faculty member of BIT’s Opto-electronics School. His research focuses on Optical Engineering, Photo-electronics Devices/Technologies/Systems, Image Processing, etc.