Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication

From Particle Scale to Feature, Die and Wafer Scales
1. Auflage. Softcover version of original hardcover Auflage 2004
ISBN: 978-3-642-06115-8
Verlag: Springer

Buch, Englisch, 311 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 511 g

Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod­ els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.

Zielgruppe

Research

Autoren/Hrsg.

Dornfeld, David A.

Luo, Jianfeng

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Mechanische und Thermische Verfahrenstechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Naturwissenschaften Chemie Physikalische Chemie

Inhaltsverzeichnis

1 Introduction.- 2 Review of CMP Modeling.- 3 Material Removal Mechanism in CMP: A Comprehensive Model of Abrasive Particle, Pad Asperity and Wafer Interactions.- 4 Effects of Abrasive Size Distribution in CMP.- 5 Material Removal Regions in CMP: Coupling Effects of Slurry Chemicals, Abrasive Particle Size Distribution and Wafer-Pad Contact Area.- 6 One and Semi-Two Dimensional Feature- and Die-Scale Modeling for the Damascene Process.- 7 Three-Dimensional Feature-Scale Modeling of CMP.- 8 Wafer-Scale Modeling of CMP.- 9 Summary and Future Work.- A Boundary Element Method.- A.1 Introduction.- A.2 Governing Differential Equation of Elastostatics.- A.3 Betti’s Reciprocal Theorem and Kelvin’s Solution.- A.4 Boundary Integral Equation.- A.5 Numerical Formulation of Boundary Integral Equation.- A.6 System Equations.- A.7 BEM vs. FEM.- A.8 References.