Nanocrystals in Nonvolatile Memory

1. Auflage 2018
ISBN: 978-981-4774-73-4
Verlag: Jenny Stanford Publishing

Buch, Englisch, 554 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 943 g

In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications.

This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

Zielgruppe

Academic, Postgraduate, and Professional Practice & Development

Autoren/Hrsg.

Banerjee, Writam

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
• Naturwissenschaften Physik Physik Allgemein

Inhaltsverzeichnis

Nanocrystal Materials, Fabrication, and Characterizations. Modeling and Simulation of Nanocrystal Flash Memory. Charge Trapping and High-k Nanocrystal Flash Memory. Silicon Nanocrystal Flash Memory. Synthesis, Characterization and Memory Application of Germanium Nanocrystals in Dielectric Matrices. Nanographene Flash Memory. Data Recovery of Flash Memory. Nanocrystals in Resistive Random Access Memory. Measurements Aspects of Nonvolatile Memory.

Über Autor(innen)

Writam Banerjee is assistant professor in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, since 2014. He completed his BSc and MSc in physics from Vidyasagar University, West Bengal, India. He received his PhD in electronic engineering from Chang Gung University, Taiwan. Dr. Banerjee has been a visiting scientist at PGI-7, Forschungszentrum Jülich GmbH, Germany, during 2012–2013 and has led its joint project with Intel Corporation, California, USA, on the development of resistive memory. He was also engaged in the development of nano-crossbar resistive random-access memory (RRAM) devices and their integration with transistors, a project in collaboration with IMEC, Belgium. He has authored and co-authored over 30 publications in reputed international journals and over 50 publications in conference proceedings. His current research interests include the novel high-k nanocrystals; design, fabrication, characterization, and analysis of RRAM, VRRAM, crossbar memory, and storage class memory; and high-density nanoscale 3D memory devices.