Advanced High Voltage Power Device Concepts

2012
ISBN: 978-1-4939-0132-6
Verlag: Springer

Buch, Englisch, 568 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 873 g

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Zielgruppe

Research

Autoren/Hrsg.

Baliga, B. Jayant

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Energietechnik | Elektrotechnik Energieverteilung, Stromnetze
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
• Naturwissenschaften Physik Angewandte Physik

Inhaltsverzeichnis

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.